PD - 96155A
IRF7700GPbF
HEXFET
®
Power MOSFET
l
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l
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Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
V
DSS
-20V
R
DS(on)
max
0.015@V
GS
= -4.5V
0.024@V
GS
= -2.5V
I
D
-8.6A
-7.3A
Description
HEXFET
®
power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for,
provides the de-
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signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-8.6
-6.8
-68
1.5
0.96
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
05/15/09
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1
IRF7700GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
-0.45
-20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
–––
–––
–––
–––
–––
–––
–––
–––
59
10
19
19
40
120
130
4300
880
580
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.015
V
GS
= -4.5V, I
D
= -8.6A
Ω
0.024
V
GS
= -2.5V, I
D
= -7.3A
-1.2
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -8.6A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
89
I
D
= -8.6A
15
nC
V
DS
= -16V
29
V
GS
= -5.0V
–––
V
DD
= -10V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -4.5V
–––
V
GS
= 0V
–––
pF
V
DS
= -15V
–––
ƒ = TBDkHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
130
180
-1.5
A
-68
-1.2
200
270
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRF7700GPbF
100
VGS
-15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
TOP
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
TOP
10
-2.0V
-2.0V
10
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -8.6A
-I D, Drain-to-Source Current
(Α
)
T J = 25°C
1.5
T J = 150°C
1.0
0.5
10
2.0
2.4
VDS = -15V
20µs PULSE WIDTH
2.8
3.2
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7700GPbF
7000
6000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
-8.6A
V
DS
=-16V
8
C, Capacitance (pF)
5000
Ciss
4000
3000
2000
1000
0
6
4
Coss
Crss
1
10
100
2
0
0
20
40
60
80
100
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
100
T
J
= 25
°
C
1
100us
10
1ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7700GPbF
10.0
V
DS
8.0
R
D
V
GS
R
G
-I
D
, Drain Current (A)
D.U.T.
+
6.0
V
GS
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
0.0
V
GS
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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