Freescale Semiconductor
Technical Data
Document Number: MRF5S19090H
Rev. 2, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 850 mA,
P
out
= 18 Watts Avg., Full Frequency Band, IS--95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.8%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dB in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19090HR3
MRF5S19090HSR3
1930-
-1990 MHz, 18 W AVG., 28 V
2 x N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF5S19090HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF5S19090HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
266
1.52
--65 to +200
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 65 W CW
Case Temperature 78°C, 18 W CW
Symbol
R
θJC
0.66
0.68
Value
(1,2)
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRF5S19090HR3 MRF5S19090HSR3
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.7
3.7
0.26
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 850 mA, P
out
= 18 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz,2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
13.5
24
—
—
—
14.5
25.8
--37
--51
--14.5
—
—
--35
--48
--9
dB
%
dBc
dBc
dB
MRF5S19090HR3 MRF5S19090HSR3
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
B1
V
BIAS
+
R1
R2
C3
C4
C5
R3
+
C7
C8
+
C13
W1
V
SUPPLY
C11
R4
C12
+
C9
+
C10
C6
Z9
Z6
RF
INPUT
Z1
Z2
C15
Z3
C14
C1
Z4
Z5
Z7
DUT
Z8
Z10
Z11
Z12
C2
Z13
RF
OUTPUT
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.140″ x 0.080″ Microstrip
0.450″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.636″ x 0.141″ Microstrip
0.340″ x 0.050″ Microstrip
0.320″ x 1.401″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091″ x 1.133″ Microstrip
0.542″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.640″ x 0.141″ Microstrip
0.316″ x 0.080″ Microstrip
1.209″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S19090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S19090HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3, C13
C4, C12
C5, C11
C6, C7
C8
C9, C10
C14
C15
R1
R2
R3, R4
W1
Description
Short RF Bead
22 pF Chip Capacitor
10 pF Chip Capacitor
1
µF,
50 V SMT Tantalum Capacitors
0.1
µF
Chip Capacitors
1k pF Chip Capacitors
4.3 pF Chip Capacitors
10
µF,
35 V SMT Tantalum Capacitor
22
µF,
35 V SMT Tantalum Capacitors
2.7 pF Chip Capacitor
0.6 – 4.5 Gigatrim Variable Capacitor
1 kΩ Chip Resistor
560 kΩ Chip Resistor
12
Ω
Chip Resistors
1 turn 14 gauge wire
Part Number
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
100B2.7BP 500X
44F3358
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
MRF5S19090HR3 MRF5S19090HSR3
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C8
C7
VGG
R1
B1
R2 C3 C4C5
CUT OUT AREA
R3
C6
W1
C11
C12
R4
C13
VDD
C9
C2
C10
C1
C14
C15
ARCHIVE INFORMATION
MRF5S19090
Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19090HR3(HSR3) Test Circuit Component Layout
MRF5S19090HR3 MRF5S19090HSR3
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
G
ps
14
G ps , POWER GAIN (dB)
η
D
V
DD
= 28 Vdc, P
out
= 18 W (Avg.), I
DQ
= 850 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
30
η
D
, DRAIN
EFFICIENCY (%)
16
40
12
IRL
IM3
8
ACPR
20
10
--20
IM3 (dBc), ACPR (dBc)
0
--10
--20
--30
--40
--50
--40
6
--60
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
ARCHIVE INFORMATION
Figure 3. 2-
-Carrier N-
-CDMA Broadband Performance
17
I
DQ
= 1300 mA
G ps , POWER GAIN (dB)
16
1100 mA
850 mA
650 mA
14
450 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--15
--20
--25
--30
--35
--40
--45
--50
--55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
650 mA
I
DQ
= 450 mA
1100 mA
1300 mA
850 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
15
13
12
Figure 4. Two-
-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--25
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
Pout , OUTPUT POWER (dBm)
--30
3rd Order
--35
--40
--45
7th Order
--50
--55
0.1
1
TWO--TONE SPACING (MHz)
10
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
56
55
54
53
52
51
50
49
48
47
46
45
31
32
33
34
35
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
µsec(on),
1 msec(off)
f = 1960 MHz
36
37
38
39
40
41
42
Actual
P1dB = 50.82 dBm (120.78 W)
P3dB = 51.21 dBm (132.13 W)
Ideal
5th Order
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19090HR3 MRF5S19090HSR3
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
IRL, INPUT RETURN LOSS (dB)
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