PD - 97044A
IRF6668
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHS compliant containing no lead or bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
Q
g
tot
Q
gd
7.8nC
80V max ±20V max 12mΩ@ 10V
22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
DirectFET
ISOMETRIC
The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Description
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
I
S
@ T
C
= 25°C
I
S
@ T
C
= 70°C
I
SM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Max.
Units
V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
e
f
f
e
f
f
80
±20
55
44
170
81
52
170
A
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
T
C
measured with thermocouple mounted to top (Drain) of part.
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11/4/05
IRF6668
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆BV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G (Internal)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
80
–––
–––
3.0
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.097
12
4.0
-11
–––
–––
–––
–––
–––
22
4.8
1.6
7.8
7.8
9.4
12
1.0
19
13
7.1
23
1320
310
76
1400
200
–––
–––
15
4.9
–––
20
250
100
-100
–––
31
–––
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 12A
g
V
mV/°C
µA
nA
S
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
DS
= 40V
nC
V
GS
= 10V
I
D
= 12A
See Fig. 14
V
DS
= 16V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
I
D
= 12A
R
G
= 6.2Ω
See Fig. 16
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 64V, f=1.0MHz
g
V
DS
= V
GS
, I
D
= 100µA
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
Min.
–––
Typ. Max. Units
–––
24
mJ
Conditions
T
J
= 25°C, I
S
= 23A, R
G
= 25Ω
L = 0.088mH. See Fig. 13
Diode Characteristics
Parameter
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
Typ. Max. Units
–––
34
40
1.3
51
60
V
ns
nC
Conditions
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
g
T
J
= 25°C, I
F
= 12A, V
DD
= 40V
di/dt = 100A/µs
g
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6668
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
h
h
f
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
hj
ij
fj
Parameter
Typ.
–––
12.5
–––
1.0
Max.
45
–––
1.4
–––
Units
°C/W
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
C
0.1
τ
J
C i=
τi/R
i
C i=
τi/R
i
Ri (°C/W)
τi
(sec)
0.3173 0.000048
0.5283 0.000336
0.5536 0.001469
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 1.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Surface mounted on 1 in. square Cu, steady state (still air).
Used double sided cooling,
mounted on
1 in. square Cu board
PCB
with small clip heatsink (still air).
R
θ
is measured at
T
J
of approximately 90°C.
Note
Note
Note
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3
IRF6668
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
6.0V
10
10
6.0V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
VDS, Drain-to-Source Voltage (V)
10
1
0.1
≤
60µs PULSE WIDTH
Tj = 150°C
1
V DS, Drain-to-Source Voltage (V)
10
Fig 2.
Typical Output Characteristics
1000
VDS = 10V
≤60µs
PULSE WIDTH
ID, Drain-to-Source Current (A)
Fig 3.
Typical Output Characteristics
2.0
ID = 12A
Typical RDS(on) (Normalized)
VGS = 10V
100
1.5
10
T J = 150°C
T J = 25°C
T J = -40°C
1.0
1
0.1
2
4
6
8
10
12
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 4.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 5.
Normalized On-Resistance vs. Temperature
12.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 64V
VDS= 40V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8 10 12 14 16 18 20 22 24
QG, Total Gate Charge (nC)
Fig 6.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 7.
Typical Total Gate Charge vs
Gate-to-Source Voltage
4
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IRF6668
RDS(on), Drain-to -Source On Resistance (m
Ω)
60
ID = 12A
50
Typical RDS(on) ( mΩ)
60
T J = 25°C
50
40
30
20
10
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
40
30
20
10
T J = 25°C
0
4
6
8
10
12
14
16
T J = 125°C
0
0
20
40
60
80
100
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 8.
Typical On-Resistance vs. Gate Voltage
1000
Fig 9.
Typical On-Resistance vs. Drain Current
6.0
Typical VGS(th) , Gate threshold Voltage (V)
ISD, Reverse Drain Current (A)
100
T J = 150°C
T J = 25°C
T J = -40°C
5.0
10
4.0
ID = 100µA
ID = 250µA
1
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
3.0
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10.
Typical Source-Drain Diode Forward Voltage
1000
Fig 11.
Typical Threshold Voltage vs.
Junction Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID
80
TOP
ID, Drain-to-Source Current (A)
100
100µsec
1msec
4.3A
7.6A
BOTTOM 23A
60
10
10msec
40
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig12.
Maximum Safe Operating Area
Fig 13.
Maximum Avalanche Energy vs. Drain Current
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