Freescale Semiconductor
Technical Data
Document Number: MRF7S18125BH
Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 1100 mA, P
out
=
125 Watts CW, f = 1930 MHz.
Power Gain — 16.5 dB
Drain Efficiency — 55%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 1100 mA,
P
out
= 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).
Power Gain — 17 dB
Drain Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 60 dBc
Spectral Regrowth @ 600 kHz Offset = - 74 dBc
EVM — 2.6% rms
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW
Output Power
•
Typical P
out
@ 1 dB Compression Point
]
140 Watts CW
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18125BHR3
MRF7S18125BHSR3
1930- 1990 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S18125BHR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S18125BHSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 125 W CW
Case Temperature 81°C, 71 W CW
Symbol
R
θJC
Value
(2,3)
0.31
0.35
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S18125BHR3 MRF7S18125BHSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 316
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1100 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1100 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.16 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Power Gain
Drain Efficiency
Input Return Loss
C
rss
C
oss
C
iss
—
—
—
1.15
673
309
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
4
0.1
1.9
2.7
5.3
0.2
2.7
—
7
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, P
out
= 125 W CW, f = 1930 MHz
G
ps
η
D
IRL
15
51
—
16.5
55
- 12
18
—
-7
dB
%
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18125BHR3 MRF7S18125BHSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point
IMD Symmetry @ 125 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 125 W CW
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 125 W CW
Average Group Delay @ P
out
= 125 W CW, f = 1960 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 125 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
140
10
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, 1930 - 1990 MHz Bandwidth
VBW
res
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
—
35
1.02
3.3
2.49
6.7
0.016
0.01
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dBm/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, P
out
= 57 W
Avg., 1930 - 1990 MHz EDGE Modulation
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
17
39
2.6
- 60
- 74
—
—
—
—
—
dB
%
% rms
dBc
dBc
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
Z13
V
SUPPLY
+
R2
C1
C8
Z12
C9
C2
C3
C6
R3
RF
INPUT
Z6
Z7
Z8
C14
C16 Z9
C18 Z10
C10
C15
Z14
C17
RF
Z11 OUTPUT
Z1
C7
Z2
Z3
Z4
Z5
DUT
C12
C13
C11
C4
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.227″ x 0.083″ Microstrip
0.697″ x 0.083″ Microstrip
0.618″ x 0.083″ Microstrip
0.568″ x 1.000″ Microstrip
0.092″ x 1.000″ Microstrip
0.095″ x 1.000″ Microstrip
0.565″ x 1.000″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13, Z14
PCB
0.200″ x 0.083″ Microstrip
1.045″ x 0.083″ Microstrip
0.071″ x 0.083″ Microstrip
0.227″ x 0.083″ Microstrip
1.280″ x 0.080″ Microstrip
0.760″ x 0.080″ Microstrip
Taconic TLX - 8 RF35, 0.031″,
ε
r
= 2.55
Figure 1. MRF7S18125BHR3(HSR3) Test Circuit Schematic
Table 5. MRF7S18125BHR3(HSR3) Test Circuit Component Designations and Values
Part
C1
C2, C3, C4, C5
C6
C7, C8, C9, C10, C11
C12, C13
C14, C15, C16, C17, C18
R1, R2
R3
Description
1
μF,
50 V Chip Capacitor
4.7
μF,
50 V Chip Capacitors
220
μF,
63 V Electrolytic Chip Capacitor
6.8 pF Chip Capacitors
1 pF Chip Capacitors
0.2 pF Chip Capacitors
10 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
12065G105AT2A
GRM55ER71H475KA01L
2222 136 68221
ATC100B6R8BT500XT
ATC100B1R0BT500XT
ATC100B0R2BT500XT
CRCW12061001FKEA
CRCW120610R1FKEA
Manufacturer
AVX
Murata
Vishay
ATC
ATC
ATC
Vishay
Vishay
MRF7S18125BHR3 MRF7S18125BHSR3
4
RF Device Data
Freescale Semiconductor
V
DD
V
GS
R1
R2
C1 C8
C9
C2
C3
R3
C14
C16
C6
C18
C10
C15
CUT OUT AREA
C17
C7
C12
C13
C11
C4
C5
MRF7S18125BH
Rev. 0
Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout
MRF7S18125BHR3 MRF7S18125BHSR3
RF Device Data
Freescale Semiconductor
5
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