PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1930 – 1990 MHz
Description
The PTFA190451E and PTFA190451F are thermally-enhanced,
45-watt, internally matched LDMOS FETs designed for WCDMA,
TD-SCDMA and other cellular standards in the 1930 to 1990 MHz
frequency band. These devices are available in thermally-enhanced
packages with eared or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA190451E
Package H-36265-2
PTFA190451F
Package H-37265-2
2-Carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-25
35
Features
•
•
Broadband internal matching
Typical two-carrier WCDMA performance at 1960
MHz, 28 V
- Average output power = 11 W
- Linear gain = 17.5 dB
- Efficiency = 28.0%
- Intermodulation distortion = –39 dBc
- Adjacent channel power = –42 dBc
Typical CW performance, 1960 MHz, 28 V
- Output power at P–1dB = 60 W
- Efficiency = 60%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
Pb-free and RoHS compliant
IM3 (dBc), ACPR (dBc)
-30
-35
-40
-45
-50
-55
30
32
34
36
Efficiency
IM3
30
25
20
15
Drain Efficiency (%)
•
ACPR
•
•
•
•
10
5
38
40
42
Average Output Power (dBm)
RF Characteristics
WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 11 W average
ƒ
1
= 1955 MHz, ƒ
2
= 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
16.5
27
—
Typ
17.5
28
–39
Max
—
—
–37
Unit
dB
%
dBc
η
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 45 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
17.5
38
–31
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.91
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 450 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 45 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
211
1.21
–40 to +150
0.83
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA190451E V4
PTFA190451F V4
Package Outline Package Description
H-36265-2
H-37265-2
Thermally-enhanced slotted flanges,
single-ended
Thermally-enhanced earless flange,
single-ended
2 of 10
Shipping
Tray
Tray
Marking
PTFA190451E
PTFA190451F
*See Infineon distributor for future availability.
Data Sheet
Rev. 03.1, 2009-02-20
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
2-Tone Drive-up
V
DD
= 28 V, I
DQ
= 450 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
Intermodulation Distortion (dBc)
-5
-25
-30
-35
-40
-45
-50
-55
-60
-65
34
36
38
40
42
44
46
48
45
Broadband Performance
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 12 W
40
Efficiency
IM3
IM5
Gain (dB), Efficiency (%)
35
30
25
20
30
25
20
15
10
1900
-15
Efficiency
-20
-25
IM7
15
10
5
Gain
-30
-35
2020
1920
1940
1960
1980
2000
Frequency (MHz)
Output Power, PEP (dBm)
Two-carrier WCDMA at Various Biases
V
DD
= 28 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show I
DQ
-32
-37
-42
-47
19
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 1990 MHz
T
CASE
= 25°C
Gain
T
CASE
= 90°C
70
60
50
40
30
550 mA
500 mA
18
17
16
15
3rd Order IMD (dBc)
400 mA
-52
450 mA
350 mA
Efficiency
14
20
10
0
10
20
30
40
50
60
-57
30
32
34
36
38
40
42
13
Output Power, Avg. (dBm)
Output Power (W)
Data Sheet
3 of 10
Rev. 03.1, 2009-02-20
Drain Efficiency (%)
Gain (dB)
Drain Efficiency (%)
Return Loss
Input Return Loss (dB)
35
-10
40
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
Adjacent Channel Power Ratio (dBc)
-25
-30
-35
-40
35
-20
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V I
DQ
= 450 mA, ƒ = 1960 MHz,
P
OUT
= 46.5 dBm PEP
Intermodulation Distortion (dBc)
-25
-30
-35
-40
-45
-50
-55
0
5
10
15
20
25
30
35
40
30
Efficiency
25
20
ACPR Up
-45
-50
-55
30
32
34
36
38
ACPR Low
Drain Efficiency (%)
3rd
15
10
5
5th
7th
40
42
44
Average Output Power (dBm)
Tone Spacing (MHz)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I
DQ
= 450 mA, ƒ = 1960 MHz, P
OUT
(PEP) = 46.5 dBm,
tone spacing = 1 MHz
Gain (dB), Drain Efficiency (%)
-10
-15
50
45
6-Carrier TD-SCDMA Performance
V
DC
= 28 V, I
DQ
= 380 mA, ƒ
o
= 2017.5 MHz
25
20
15
10
5
-10
-20
-30
-40
-50
3rd Order IMD (dBc)
30
-30
-35
-40
-45
23 24
25 26
27 28 29
30 31
32 33
25
20
Efficiency
Alt Up
Adj Up
Gain
15
10
Adj Low Alt Low
0
29
31
33
35
37
39
-60
Supply Voltage (V)
Output Power, Avg. (dBm)
*See Infineon distributor for future availability.
Data Sheet
4 of 10
Rev. 03.1, 2009-02-20
ACPR (dBc)
-25
35
Drain Efficiency (%)
-20
IM3 Up
Efficiency
40
PTFA190451E
PTFA190451F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
|
2.09 A
2.78 A
3.48 A
4.17 A
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
Case Temperature (°C)
Broadband Circuit Impedance
D
Frequency
Z Load
MHz
1900
1930
1960
1990
R
Z Source
Ω
jX
–0.094
–0.444
–0.881
–1.437
–2.315
15.51
16.30
17.19
18.02
18.79
Z Load
Ω
R
5.73
5.68
5.69
5.63
5.61
jX
–1.71
–1.52
–1.31
–1.08
–0.91
Z
0
= 50
Ω
Z Source
G
S
2020
-
W
AV
E
LE
NGT
H
S
Z Source
0.0
0.1
0.2
0.3
0.4
W
ARD
LOAD
-
T HS
T
O
NG
2020 MHz
1900 MHz
1900 MHz
2020 MHz
Z Load
0. 1
Data Sheet
5 of 10
0.5
Rev. 03.1, 2009-02-20
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