PD - 95433
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
UPS and Motor Control
l
Lead-Free
IRF8010SPbF
IRF8010LPbF
HEXFET
®
Power MOSFET
V
DSS
100V
R
DS(on)
max
15mΩ
I
D
80A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
l
Typical R
DS(on)
= 12mΩ
D
2
Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
80
57
320
260
1.8
± 20
i
Units
A
W
W/°C
V
V/ns
°C
c
P
D
@T
C
= 25°C Power Dissipation
V
GS
dv/dt
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
16
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Junction-to-Case
Junction-to-Case (end of life)
Typ.
–––
–––
0.50
–––
Max.
0.57
0.80
–––
40
Units
°C/W
g
j
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
Notes
through
are on page 8
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1
06/21/04
IRF8010S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
2.0
–––
–––
–––
–––
–––
0.11
12
–––
–––
–––
–––
–––
–––
–––
15
4.0
20
250
200
-200
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 45A
f
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
82
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
81
22
26
15
130
61
120
3830
480
59
3830
280
530
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
I
D
= 80A
V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 80A
R
G
= 39Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 25V, I
D
= 45A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
e
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
di
Typ.
–––
–––
–––
Max.
310
45
26
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
99
460
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
80
A
320
1.3
150
700
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ãi
p-n junction diode.
T
J
= 25°C, I
S
= 80A, V
GS
= 0V
f
T
J
= 150°C, I
F
= 80A, V
DD
= 50V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF8010S/LPbF
10000
TOP
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
1000
TOP
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.0V
10
10
4.0V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.5
I
D
= 80A
ID, Drain-to-Source Current
(Α
)
T J = 175°C
R
DS(on)
, Drain-to-Source On Resistance
3.0
2.5
100
(Normalized)
2.0
10
T J = 25°C
1.5
1.0
VDS = 50V
20µs PULSE WIDTH
1
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.5
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF8010S/LPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
VGS , Gate-to-Source Voltage (V)
ID= 80A
VDS= 80V
VDS= 50V
VDS= 20V
10
8
6
4
2
0
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
1000
I
SD
, Reverse Drain Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
T
J
= 25
°
C
1
V
GS
= 0 V
0.1
0.0
0.5
1.0
1.5
2.0
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF8010S/LPbF
80
V
DS
LIMITED BY PACKAGE
R
D
V
GS
R
G
10V
D.U.T.
+
60
-
V
DD
I
D
, Drain Current (A)
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
Thermal Response
1
D = 0.50
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
0.20
0.1
0.10
0.05
0.02
0.01
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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