PD - 94494A
Typical Applications
●
●
HEXFET
®
Power MOSFET
D
IRF1503S
IRF1503L
V
DSS
= 30V
R
DS(on)
= 3.3mΩ
14V Automotive Electrical Systems
14V Electronic Power Steering
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
●
●
●
●
●
G
S
I
D
= 75A
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
®
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
2
Pak
IRF1503S
TO-262
IRF1503L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
190
130
75
960
200
1.3
± 20
510
980
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
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1
12/11/02
IRF1503S/IRF1503L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
30
–––
–––
2.0
75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.028
2.6
–––
–––
–––
–––
–––
–––
130
36
41
17
130
59
48
5.0
13
5730
2250
290
7580
2290
3420
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
3.3
mΩ V
GS
= 10V, I
D
= 140A
4.0
V
V
DS
= 10V, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 140A
20
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
200
I
D
= 140A
54
nC V
DS
= 24V
62
V
GS
= 10V
–––
V
DD
= 15V
–––
I
D
= 140A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 24V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 190
showing the
A
G
integral reverse
––– ––– 960
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 140A, V
GS
= 0V
––– 71 110
ns
T
J
= 25°C, I
F
= 140A
––– 110 170
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.049mH
R
G
= 25Ω, I
AS
= 140A. (See Figure 12).
I
SD
≤
140A, di/dt
≤
110A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
2
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IRF1503S/IRF1503L
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
200
T J = 25°C
T J = 175°C
Gfs, Forward Transconductance (S)
T J = 175°C
160
ID, Drain-to-Source Current
(Α
)
120
100
T J = 25°C
80
40
VDS = 25V
20µs PULSE WIDTH
0
0
40
80
120
160
200
10
4.0
5.0
6.0
VDS = 25V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF1503S/IRF1503L
10000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
Crss
Coss
= Cgd
= C + Cgd
ds
20
ID= 140A
8000
VGS , Gate-to-Source Voltage (V)
VDS= 24V
16
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
Crss
0
1
10
100
0
0
40
80
120
160
200
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
1000
100
100µsec
1msec
1.0
T J = 25°C
VGS = 0V
0.0
0.4
0.8
1.2
1.6
2.0
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
0.1
100
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1503S/IRF1503L
200
2.0
I
D
= 240A
LIMITED BY PACKAGE
160
R
DS(on)
, Drain-to-Source On Resistance
1.5
I
D
, Drain Current (A)
120
(Normalized)
1.0
80
0.5
40
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
T
J
, Junction Temperature
(
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
P
DM
0.05
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJC
+T
C
1
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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