MII 300-12 E4
IGBT Module
phaseleg
Preliminary data
8
9
T2
0
2
D2
3
T
D
I
C25
= 280 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
IGBTs T1 - T2
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
5 V; R
G
= 7.5
Ω;
T
VJ
= 25°C
RBSOA
Clamped inductive load; L = 00 µH
V
CE
= 900 V; V
GE
=
±
5 V; R
G
= 7.5
Ω
T
VJ
= 25°C; non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 25°C
Maximum Ratings
200
±
20
280
200
V
Features
• NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance in resonant circuits
• HiPerFRED
TM
diodes
- fast and soft reverse recovery
- low operating forward voltage
- low leakage current
• Package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- kelvin emitter terminal for easy drive
- isolated ceramic base plate
Applications
• drives
- AC
- DC
• power supplies
- rectifiers with power factor correction
and recuperation capability
- UPS
-o
300
V
CES
0
00
typ.
2.2
2.6
4.5
5.5
0.8
3.5
70
60
680
50
29
20
.6
0.
0.22
max.
2.8
6.5
3.3
400
e
min.
(T
VJ
= 25°C, unless otherwise specified)
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 200 A; V
GE
= 5 V;
I
C
= 6 mA; V
GE
= V
CE
a
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
s
Characteristic Values
h
V
CE
= 0 V; V
GE
=
±
20 V
p
V
CE
= V
CES
; V
GE
= 0 V;
Inductive load, T
VJ
= 25°C
V
CE
= 600 V; I
C
= 200 A
V
GE
= ±5 V; R
G
= 7.5
Ω
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 200 A
(per IGBT)
with heatsink compound
u
A
A
A
µs
W
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
µC
K/W
K/W
t
V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
-2
0645
MII 300-12 E4
Free wheeling diodes D1 - D2
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Module
Symbol
T
VJ
T
stg
V
ISO
M
d
Symbol
Conditions
operating
I
ISOL
< mA; 50/60 Hz
Mounting torque (module, M6)
(terminal, M6)
Conditions
Maximum Ratings
-40...+50
-40...+25
4000
2.25 - 2.75
4.5 - 5.5
°C
°C
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 200 A; V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 25°C
min.
typ.
2.3
.7
60
220
0.23
0.45
Maximum Ratings
300
90
A
A
Equivalent Circuits for Simulation
Conduction
Characteristic Values
max.
2.7
V
V
A
ns
K/W
K/W
I
V
0
R
0
I
F
= 50 A; di
F
/dt = 500 A/µs;
V
R
= 600 V; V
GE
= 0 V;
T
VJ
= 25°C
(per IGBT)
with heatsink compound
IGBT (typ. at V
GE
= 5 V; T
J
= 25°C)
V
0
= 1.0 V; R
0
= 8 mW
Free Wheeling Diode D-D2 (typ. at T
J
= 25°C)
V
0
= 1.3 V; R
0
= 2 mW
Thermal Response
P
V
T
J
R
th1
C
th1
R
th2
C
th2
T
C
u
Nm
Nm
min.
-o
typ.
max.
250
Characteristic Values
d
S
d
A
Weight
Creepage distance on surface
Strike distance in air
e
s
a
2
2
mm
mm
g
Dimensions in mm (1 mm = 0.0394")
h
p
t
V~
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode D-D2 (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Optional accessories for modules
keyed twin plugs
(UL758, style 385, CSA class 585,
guide 460--)
• Type ZY80L with wire length 350mm
– for pins 4 (yellow wire) and 5 (red wire)
– for pins (yellow wire) and 0 (red wire)
• Type ZY80R with wire length 350mm
– for pins 7 (yellow wire) and 6 (red wire)
– for pins 8 (yellow wire) and 9 (red wire)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2-2
0645
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