Freescale Semiconductor
Technical Data
Document Number: MRFG35003AN
Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 12 Volts, I
DQ
=
55 mA, P
out
= 300 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10.8 dB
Drain Efficiency — 24.5%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
•
3 Watts P1dB @ 3550 MHz, CW
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003ANT1
3.5 GHz, 3 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
Value
15
-5
29
- 65 to +150
175
Unit
Vdc
Vdc
dBm
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
15.9
Unit
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
MRFG35003ANT1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate- Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 6.5 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 80 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
- 1.2
- 1.2
Typ
1.3
<1
—
2
- 0.9
- 0.9
Max
—
100
450
7
- 0.7
- 0.7
Unit
Adc
μAdc
μAdc
mAdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 12 Vdc, I
DQ
= 55 mA, P
out
= 300 mWatts Avg., f = 3550 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
h
D
ACPR
9.5
22
—
10.8
24.5
- 43
—
—
- 40
dB
%
dBc
Typical RF Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 12 Vdc, I
DQ
= 55 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P
1dB
—
3
—
W
MRFG35003ANT1
2
RF Device Data
Freescale Semiconductor
V
BIAS
C6
C10
C9
C8
C7
C5
C4
R1
C14
C13
C24
C11
C12
Z13
Z11
Z12
C23
Z19
C20
C21
C22
C15
C16
C17
C18
C19
V
SUPPLY
C2
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C3
Z9
Z10
RF
OUTPUT
Z14 Z15 Z16 Z17 Z18
Z1, Z19
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9, Z13
0.044″ x 0.125″ Microstrip
0.044″ x 0.050″ Microstrip
0.044″ x 0.242″ Microstrip
0.704″ x 0.128″ Microstrip
0.142″ x 0.121″ Microstrip
0.885″ x 0.075″ Microstrip
0.029″ x 0.434″ Microstrip
0.029″ x 0.146″ x 0.130″ Taper
0.015″ x 0.527″ Microstrip
Z10
Z11
Z12
Z14
Z15
Z16
Z17
Z18
PCB
0.146″ x 0.170″ Microstrip
0.146″ x 0.070″ Microstrip
0.146″ x 0.459″ x 0.130″ Taper
0.459″ x 0.537″ Microstrip
0.347″ x 0.186″ Microstrip
0.627″ x 0.076″ Microstrip
0.044″ x 0.075″ Microstrip
0.044″ x 0.276″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. MRFG35003ANT1 Test Circuit Schematic
Table 6. MRFG35003ANT1 Test Circuit Component Designations and Values
Part
C1, C20
C2, C3, C11, C12
C4, C13
C5, C14
C6, C15
C7, C16
C8, C17
C9, C18
C10, C19
C21, C22, C23
C24
R1
Description
7.5 pF Chip Capacitors
3.9 pF Chip Capacitors
10 pF Chip Capacitors
0.01
μF
Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
39K pF Chip Capacitors
0.01
μF
Chip Capacitors
10
μF
Chip Capacitors
0.4 pF Chip Capacitors
5.6 pF Chip Capacitor
100
Ω,
1/4 W Chip Resistor
Part Number
ATC100A7R5JT150XT
08051J3R9BBS
ATC100A100JT150XT
GRM1881X1H103JA01
ATC100B101JT500XT
ATC100B102JT50XT
ATC200B393KT50XT
ATC200B103KT50XT
GRM55DR61H106KA88B
08051J0R4ABS
08051J5R6BBS
ERJ - 8GEYJ101V
Manufacturer
ATC
AVX
ATC
Murata
ATC
ATC
ATC
ATC
Murata
AVX
AVX
Panasonic
MRFG35003ANT1
RF Device Data
Freescale Semiconductor
3
C6
C15
C10
C9
C8
C7
C5
C4
C14
C13
C11
C24
C12
C16
C17
C18
C19
C2
R1
C3
C1
C23
C21
C22
C20
MRFG35003AN Rev. 0
Figure 2. MRFG35003ANT1 Test Circuit Component Layout
MRFG35003ANT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
14
G
ps
, POWER GAIN (dB)
12
G
ps
10
8
η
D
6
4
18
20
22
24
26
28
30
P
out
, OUTPUT POWER (dBm)
10
0
32
30
20
V
DS
= 12 Vdc, I
DQ
= 55 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
S
= 0.833é−108.2_,
Γ
L
= 0.698é−151.1_
60
50
40
η
D
, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−10
V
DS
= 12 Vdc, I
DQ
= 55 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
S
= 0.833é−108.2_,
Γ
L
= 0.698é−151.1_
IRL
−5
−20
−10
−30
−15
−40
−20
−50
−60
18
20
22
ACPR
−25
24
26
28
30
−30
32
P
out
, OUTPUT POWER (dBm)
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35003ANT1
RF Device Data
Freescale Semiconductor
5
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