Freescale Semiconductor
Technical Data
Document Number: MRF8S18120H
Rev. 1, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequen-
cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 800 mA, P
out
=
72 Watts CW
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
18.2
18.6
18.7
η
D
(%)
49.8
51.4
53.9
MRF8S18120HR3
MRF8S18120HSR3
1805-
-1880 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
120 Watts CW
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 800 mA, P
out
=
46 Watts Avg.
G
ps
(dB)
17.9
18.2
18.3
η
D
(%)
41.0
41.9
43.2
SR1
@ 400 kHz
(dBc)
--64
--63
--61
SR2
@ 600 kHz
(dBc)
--76
--76
--76
EVM
(% rms)
1.6
1.7
2.0
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S18120HR3
Frequency
1805 MHz
1840 MHz
1880 MHz
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S18120HSR3
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
MRF8S18120HR3 MRF8S18120HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 72 W CW, 28 Vdc, I
DQ
= 800 mA
Case Temperature 79°C, 120 W CW, 28 Vdc, I
DQ
= 800 mA
Symbol
R
θJC
Value
(1,2)
0.47
0.46
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 260
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.3 Adc)
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.8
0.1
1.8
2.6
0.2
2.7
3.3
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 72 W CW, f = 1805 MHz
G
ps
η
D
IRL
P1dB
G
ps
(dB)
18.2
18.6
18.7
17
48
—
112
18.2
49.8
--11
—
20
—
--8
—
IRL
(dB)
--11
--15
--12
dB
%
dB
W
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 72 W CW
Frequency
1805 MHz
1840 MHz
1880 MHz
η
D
(%)
49.8
51.4
53.9
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S18120HR3 MRF8S18120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 94 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P
out
= 72 W CW
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
120
10
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, 1805--1880 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
35
0.5
0.01
0.004
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 46 W Avg.,
1805--1880 MHz EDGE Modulation
G
ps
(dB)
17.9
18.2
18.3
η
D
(%)
41.0
41.9
43.2
SR1
@ 400 kHz
(dBc)
--64
--63
--61
SR2
@ 600 kHz
(dBc)
--76
--76
--76
EVM
(% rms)
1.6
1.7
2.0
Frequency
1805 MHz
1840 MHz
1880 MHz
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
3
R2
C3
C8
C4
C9 C10
C13
C7
C6 C5
R1
C11 C12
CUT OUT AREA
C1
C2
MRF8S18120
Rev. 2
Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2
C3, C8
C4
C5
C6, C9
C7
C10, C11, C12
C13
R1
R2
PCB
Description
12 pF Chip Capacitors
9.1 pF Chip Capacitors
10 nF Chip Capacitor
8.2 pF Chip Capacitor
2.2
μF,
100 V Chip Capacitors
47
μF,
16 V Tantalum Capacitor
10
μF,
50 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitor
10
Ω,
1/4 W Chip Resistor
4.75
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
Part Number
ATC100B120JT500XT
ATC100B9R1CT500XT
C1825C103K1GAC--TU
ATC100B8R2CT500XT
C3225X7R2A225KT
T491D476K016AT
GRM55DR61H106KA88L
MCRH63V337M13X21--RH
CRCW120610R0JNEA
CRCW12064R75FNEA
250GX--0300--55--22
Manufacturer
ATC
ATC
Kemet
ATC
TDK
Kemet
Murata
Multicomp
Vishay
Vishay
Arlon
MRF8S18120HR3 MRF8S18120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
21
20
G
ps
, POWER GAIN (dB)
19
18
17
IRL
16
15
1760
35
30
1920
V
DD
= 28 Vdc, P
out
= 72 W CW, I
DQ
= 800 mA
η
D
G
ps
45
40
60
55
50
η
D,
DRAIN EFFICIENCY (%)
--5
--10
--15
--20
1780
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P
out
= 72 Watts CW
21
20
G
ps
, POWER GAIN (dB)
19
18
17
IRL
16
15
1760
EVM
1780
1800
1820
1840
1860
1880
1900
1
1920
2
G
ps
V
DD
= 28 Vdc, P
out
= 46 W Avg.
I
DQ
= 800 mA, EDGE Modulation
η
D
50
45
40
35
3
η
D,
DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
--5
--10
--15
--20
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ P
out
= 46 Watts Avg.
--10
IMD, INTERMODULATION DISTORTION (dBc)
--20
V
DD
= 28 Vdc, P
out
= 94 W (PEP)
I
DQ
= 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
G
ps
, POWER GAIN (dB)
IM3--U
--30
--40
--50
--60
1
10
TWO--TONE SPACING (MHz)
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
100
19
f = 1880 MHz
1805 MHz
1840 MHz
1880 MHz
1805 MHz
V
DD
= 28 Vdc
I
DQ
= 800 mA
10
P
out
, OUTPUT POWER (WATTS) CW
100
η
D,
DRAIN EFFICIENCY (%)
18
G
ps
17
16
15
η
D
14
1
1840 MHz
60
45
30
15
75
EVM, ERROR VECTOR
MAGNITUDE (% rms)
300
0
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
Figure 5. Power Gain and Drain Efficiency
versus Output Power
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
5
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