CM100TL-24NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Six IGBTMOD™
NF-Series Module
100 Amperes/1200 Volts
E
F
G
K
C
CN
N
8
1
A
D
H
J
J
M
1
1
1
B
UP
VP
WP
K
U
T
P
B
AA
U
V
AB
W
N
Q
P
L
K
S
R
K
R
K
R
K
V
K
X
Y
W
P
B
NC
UP-1
UP-2
U
VP-1
VP-2
V
WP-1
WP-2
W
CN-7
CN-8
N
NC
NC
CN-5
CN-6
CN-3
CN-4
CN-1
CN-2
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
UPS
£
Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM100TL-24NF is a 1200V (V
CES
),
100 Ampere
Six-IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
100
V
CES
Volts (x 50)
24
1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
4.72
2.17
1.39
4.17±0.02
0.43
0.28
0.54
1.61
0.67
0.47
M5
0.22 Dia.
Millimeters
120.0
55.0
35.0
106.0±0.5
11.0
7.0
13.62
40.78
17.0
12.0
M5
Dia. 5.5
Dimensions
N
P
Q
R
S
T
U
V
W
X
Y
Inches
1.23
0.47
0.53
0.91
0.87
Millimeters
32.0
11.75
13.5
23.0
22.0
0.76
19.75
0.42
10.75
0.87+0.04/-0.02 22.0+1.0/-0.5
0.91
0.63
0.12
23.2
16.0
3.0
Housing Types (J.S.T. Mfg. Co. Ltd.)
AA – B8P-VH-FB-B
AB – B2P-VH-FB-B
10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TL-24NF
Six IGBTMOD™ NF-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
C
= 80°C)*
Peak Collector Current (Tj
≤
150°C)
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T
C
= 25°C, T
j
< 150°C)
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
C
—
—
—
V
ISO
CM100TL-24NF
-40 to 150
-40 to 125
1200
±20
100
200**
100
200**
620
31
31
350
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Electrical and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
Qrr
V
EC
I
E
= 100A, V
GE
= 0V
V
CC
= 600V, I
C
= 100A,
V
GE1
= V
GE2
= 15V,
R
G
= 3.1Ω, I
E
= 100A,
Inductive Load Switching Operation
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0V
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 10mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 100A, V
GE
= 15V, T
j
= 25°C
I
C
= 100A, V
GE
= 15V, T
j
= 125°C
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
7
—
2.1
2.4
—
—
—
500
—
—
—
—
—
4.8
—
Max.
1.0
8
0.5
3.0
—
17.5
1.5
0.34
—
100
70
300
350
150
—
3.8
Units
mA
Volts
µA
Volts
Volts
nf
nf
nf
nC
ns
ns
ns
ns
ns
µC
Volts
Reverse Recovery Time***
Reverse Recovery Charge***
Emitter-Collector Voltage***
*T
C
, T
f
measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TL-24NF
Six IGBTMOD™ NF-Series Module
100 Amperes/1200 Volts
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T
C
, T
f
measured point is just under the chips.
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
R
G
Test Conditions
Per IGBT 1/6 Module
Per FWDi 1/6 Module
Per 1/6 Module, Thermal Grease Applied
Min.
—
—
—
3.1
Typ.
—
—
—
—
Max.
0.20
0.28
0.085
42
Units
°C/W
°C/W
°C/W
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
15
13
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
V
GE
= 20V
COLLECTOR CURRENT, I
C
, (AMPERES)
T
j
= 25°C
4
150
3
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0
T
j
= 25°C
I
C
= 200A
I
C
= 100A
I
C
= 40A
100
11
2
50
10
1
9
0
0
2
4
6
8
10
0
0
50
100
150
200
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
T
j
= 125°C
10
2
V
GE
= 0V
C
ies
SWITCHING TIME, (ns)
10
3
t
f
t
d(off)
10
1
10
2
t
d(on)
t
r
10
2
10
0
C
oes
C
res
10
1
10
-1
10
1
0
1
2
3
4
5
10
-2
10
-1
10
0
10
1
10
2
10
0
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive Load
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
10/10 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100TL-24NF
Six IGBTMOD™ NF-Series Module
100 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE VS. VGE
I
C
= 100A
V
CC
= 400V
V
CC
= 600V
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
16
12
8
4
0
10
2
10
1
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25°C
Inductive Load
I
rr
t
rr
10
2
10
0
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
E
SW(on)
E
SW(off)
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
160
320
480
640
800
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
GATE CHARGE, Q
G
, (nC)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS, E
SW(on)
, E
SW(off)
, (mJ/PULSE)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
10
2
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
1
10
1
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
V
CC
= 600V
V
GE
= ±15V
I
C
= 100A
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
2
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive Load
C Snubber at Bus
E
rr
10
2
V
CC
= 600V
V
GE
= ±15V
I
E
= 100A
T
j
= 125°C
Inductive Load
C Snubber at Bus
10
1
E
rr
10
0
10
0
E
SW(on)
E
SW(off)
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
0
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
10
0
10
0
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
Z
th
= R
th
• (NORMALIZED VALUE)
10
0
10
-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
-2
10
-1
10
0
10
1
10
-1
10
-2
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.20°C/W
(IGBT)
R
th(j-c)
=
0.28°C/W
(FWDi)
10
-1
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
10/10 Rev. 1
嵌入式系统
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