PD- 93759B
IRLMS4502
HEXFET
®
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
D
1
6
A
D
V
DSS
= -12V
D
2
5
D
G
3
4
S
R
DS(on)
= 0.042Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-5.5
-4.4
-44
1.7
1.1
0.013
28
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
75
Units
°C/W
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01/13/03
IRLMS4502
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-12
–––
–––
–––
-0.60
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.003 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.042
V
GS
= -4.5V, I
D
= -5.5A
Ω
––– 0.075
V
GS
= -2.5V, I
D
= -4.7A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -5.5A
––– -1.0
V
DS
= -12V, V
GS
= 0V
µA
––– -25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 125°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
22
33
I
D
= -5.5A
3.9 5.8
nC V
DS
= -10V
11
16
V
GS
= -5.0V
18 –––
V
DD
= -6.0V
460 –––
I
D
= -1.0A
ns
130 –––
R
G
= 4.5Ω
250 –––
R
D
= 6.0Ω
1820 –––
V
GS
= 0V
1110 –––
pF
V
DS
= -10V
1070 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
31
21
-1.7
-44
-1.2
46
32
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= -5.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t
≤
5sec.
Starting T
J
= 25°C, L = 1.8mH
R
G
= 25Ω, I
AS
= -5.5A. (See Figure 12)
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRLMS4502
1000
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
100
-I
D
, Drain-to-Source Current (A)
100
-I
D
, Drain-to-Source Current (A)
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
10
-2.25V
10
-2.25V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -5.5A
-I
D
, Drain-to-Source Current (A)
1.5
100
1.0
T
J
= 25
°
C
T
J
= 150
°
C
0.5
10
2.0
V DS = -15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLMS4502
2600
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
15
I
D
=
-5.5A
V
DS
=-10V
-V
GS
, Gate-to-Source Voltage (V)
2200
12
C, Capacitance(pF)
Ciss
1800
9
6
1400
Coss
Crss
1000
1
10
100
3
0
0
10
20
30
40
-V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
10
100us
T
J
= 25
°
C
1
1ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLMS4502
6.0
80
5.0
E
AS
, Single Pulse Avalanche Energy (mJ)
ID
TOP
-2.5A
-4.4A
BOTTOM -5.5A
-I
D
, Drain Current (A)
60
4.0
3.0
40
2.0
20
1.0
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
Thermal Response (Z
thJA
)
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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