PN918 / MMBT918
PN918
MMBT918
C
E
C
B
TO-92
E
SOT-23
Mark: 3B
B
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
30
3.0
50
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN918
350
2.8
125
357
Max
*MMBT918
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997
Fairchild Semiconductor Corporation
PN918 / MMBT918
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
CEO(
sus
)
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 3.0 mA, I
B
= 0
I
C
= 1.0
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 15 V, I
E
= 0
V
CB
= 15 V, T
A
= 150°C
15
30
3.0
0.01
1.0
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 3.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
20
0.4
1.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
I
C
= 4.0 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CB
= 0, I
E
= 0, f = 1.0 MHz
V
BE
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 1.0 mA, V
CE
= 6.0 V,
R
G
= 400Ω, f = 60 MHz
600
1.7
3.0
2.0
6.0
MHz
pF
pF
pF
dB
FUNCTIONAL TEST
G
pe
P
O
η
Amplifier Power Gain
Power Output
Collector Efficiency
V
CB
= 12 V, I
C
= 6.0 mA,
f = 200 MHz
V
CB
= 15 V, I
C
= 8.0 mA,
f = 500 MHz
V
CB
= 15 V, I
C
= 8.0 mA,
f = 500 MHz
15
30
25
dB
mW
%
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
PN918 / MMBT918
NPN RF Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
90
80
70
60
50
40
30
20
0.1
0.2
0.5
1
2
5
10
20
I
C
- COLLECTOR CURRENT (mA)
50
- 40 °C
25 °C
V
CE
= 5V
V
CES AT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
125 °C
β
= 10
125 °C
0.15
0.1
0.05
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
30
25 °C
- 40 °C
V
BE(ON)
- BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
0.9
0.8
0.7
0.6
125 °C
1
- 40 °C
V
CE
= 5V
- 40 °C
25 °C
0.8
25 °C
0.6
125 °C
0.5
0.4
0.3
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
20
0.4
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
30
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
5
100
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
CAPACITANCE (pF)
V
CB
= 20V
10
1
1
Cob
Cib
0.1
25
50
75
100
125
T
A
- AMBIENTTEMPERATURE ( ° C)
150
0.1
0.1
1
10
100
V
CE
- COLLECTOR VOLTAGE (V)
PN918 / MMBT918
NPN RF Transistor
(continued)
Typical Characteristics
(continued)
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
1050
900
750
600
450
300
150
0
1
10
20
50
100
200
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
15
Vce = 5V
100 MHz
900 MHz
T
A
= 25
°
C
12
300 MHz
800 MHz
9
600 MHz
6
400 MHz
3
600 MHz
0
0.1
0.2
0.5
1
5
10
20
200 MHz
50
100
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
1000
h
FE
-SMALL SIGNAL CURRENT TRANS RATIO
Contours of Constant Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
500
Small Signal Current Gain
vs Collector Current
90
f = 10 MHz
V
CE
= 10V
80
200
100
50
70
60
20
10
0.1
NOISE FIG. (dB)
f = 60 MHz
50
V
CE
= 6.0V
0.5
1
5
10
50
100
40
0
2
4
6
8
10
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
P
D
- POWER DISSIPATION (mW)
350
300
TO-92
250
200
150
100
50
0
0
25
50
75
100
125
150
SOT-23
TEMPERATURE (
°
C)
PN918 / MMBT918
NPN RF Transistor
(continued)
Common Emitter Y Parameters vs. Frequency
Input Admittance vs Collector
Current-Output Short Circuit
Y
ie
- INPUT ADMITTANCE (mmho)
f = 10.7 MHz
Input Admittance vs Collector
Current-Output Short Circuit
Y
ie
- INPUT ADMITTANCE (mmho)
10
2
f = 100 MHz
V
CE
= 10V
1.6
8
g
ie
1.2
6
V
CE
= 5V
V
CE
= 10V
0.8
b
ie
4
V
CE
= 10V
V
CE
= 5V
0.4
2
0
0
2
4
6
8
10
0
0
2
4
6
8
10
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Y
ie
- INPUT ADMITTANCE (mmho)
25
FORWARD TRANS. ADMITTANCE (mmho)
Input Admittance vs
Frequency-Output Short Circuit
I c = 5.0 mA
Forward Transfer Admittance vs
Frequency-Output Open Circuit
100
20
V
CE
= 10V
g
ie
I c = 5.0 mA
80
V
CE
= 10V
15
60
10
40
-b
fe
g
fe
10
20
50
100
200
500
1000
5
b
ie
10
20
50
100
200
500
1000
20
0
0
f - FREQUENCY (MHz)
fe
-
f - FREQUENCY (MHz)
Y
fe
-FORWARD TRANS. ADMITTANCE (mmho)
Y
fe
-FORWARD TRANS ADMITTANCE (mmho)
Forward Trans. Admittance vs Collector
Current-Output Short Circuit
120
Forward Trans. Admittance vs Collector
Current-Output Short Circuit
100
f = 10.7 MHz
100
f = 100 MHz
V
CE
= 10V
g
fe
80
V
CE
= 10V
V
CE
= 5.0V
80
60
V
CE
= 5.0V
g
fe
V
CE
= 10V
60
40
40
20
20
-b
fe
0
2
4
6
8
10
-b
fe
0
2
4
6
8
10
0
0
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
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