BFS380L6
NPN Silicon RF Transistor
Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz
Built in 2 transistors ( TR1, TR2: die as BFR380L3)
6
T R 1
5
T R 2
4
4
5
6
1
2
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
P-TSLP-6-1
1
2
3
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFS380L6
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
FC
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
6
15
15
2
80
14
380
150
-65 ... 150
-65 ... 150
Value
140
Unit
K/W
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
96°C
Jun-11-2003
BFS380L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 40 mA,
V
CE
= 3 V
h
FE
60
130
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
6
9
-
V
typ.
max.
Unit
2
Jun-11-2003
BFS380L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 40 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 8 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
I
C
= 8 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 3 GHz
Power gain, maximum available
1)
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
Unit
max.
-
-
-
-
dB
GHz
pF
typ.
14
0.5
0.2
1.1
-
-
-
-
C
cb
C
ce
C
eb
F
min
-
-
G
ma
-
-
|S
21e
|
2
1.3
1.9
-
-
12
8
-
-
dB
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 3 GHz
V
CE
= 3 V,
I
C
= 40 mA,
f
= 1.8 GHz,
1dB Compression point at output
,
-
,
-
IP
3
-
6.5
27
-
-
dBm
10
-
Third order intercept point at output
2)
Z
S
=
Z
L
= 50
1
G
1/2
ma
= |S
21e
/
S
12e
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
I
C
= 40 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
P
-1dB
,
-
11.5
-
from 0.1 MHz to 6 GHz
3
Jun-11-2003
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
