Preliminary
Datasheet
BCR8PM-12LG
Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
V
iso
: 2000 V
R07DS0103EJ0300
(Previous: REJ03G1508-0200)
Rev.3.00
Sep 13, 2010
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing
machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric
heater control, and other general purpose control applications
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Symbol
V
DRM
V
DSM
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Voltage class
12
600
720
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 107C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
T
2
G terminal to case
R07DS0103EJ0300 Rev.3.00
Sep 13, 2010
Page 1 of 7
BCR8PM-12LG
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
4.3
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 12 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C/150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0103EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 7
BCR8PM-12LG
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
0
10
2 3
5 7 10
1
On-State Current (A)
3
2
10
7
5
3
2
0
1
Tj = 150°C
Tj = 25°C
10
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
2 3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10V
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140 160
I
RGT III
Typical Example
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
V
GT
= 1.5V
I
RGT I
, I
FGT I
10
–1
7
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.1V
5
10
1
2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140 160
1
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
Transient Thermal Impedance (°C/W)
10
2
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
–1
10
3
10
4
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0103EJ0300 Rev.3.00
Sep 13, 2010
Page 3 of 7
BCR8PM-12LG
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
–1
10
1
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
2
4
6
8
10 12 14 16
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
2 3 5 710
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
160
Curves apply regardless
of conduction angle
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
Ambient Temperature (°C)
Case Temperature (°C)
140
120
100
80
60
40
140
120
100
80
60
40
20
0
0
2
360° Conduction
20
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
0
0
2
4
6
8
10 12 14 16
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
7
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
–60 –40–20 0 20 40 60 80 100 120 140 160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0103EJ0300 Rev.3.00
Sep 13, 2010
Page 4 of 7
BCR8PM-12LG
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Preliminary
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
Typical Example
10
2
7
5
4
3
2
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
1
–60 –40 –20 0 20 40 60 80 100 120140 160
10
1
7
5
3
T +, G+
2
2
– – Typical Example
T
2
, G
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
80
60
40
20
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
Typical Example
0
–60 –40–20 0 20 40 60 80 100 120 140 160
0
1
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
100
80
60
40
20
I Quadrant
III Quadrant
Commutation Characteristics (Tj = 125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj = 150°C
7
5
3
2
1
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
7
5
Minimum
Characteristics
3
2
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
I Quadrant
0
1
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
10
0
7
0
10
III Quadrant
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0103EJ0300 Rev.3.00
Sep 13, 2010
Page 5 of 7
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