DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC856W; BC857W; BC858W
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 12
2002 Feb 04
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMBER
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
MARKING CODE
(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3M*
Fig.1
1
Top view
handbook, halfpage
BC856W; BC857W;
BC858W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM048
Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856W
BC857W
BC858W
V
CEO
collector-emitter voltage
BC856W
BC857W
BC858W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
open base
PARAMETER
collector-base voltage
BC856W; BC857W; BC858W
CONDITIONS
open emitter
−
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
CONDITIONS
in free air; note 1
VALUE
625
UNIT
K/W
2002 Feb 04
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
BC856W; BC857W; BC858W
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
MIN.
−
−
−
125
125
125
220
420
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
−
−
−
−
MAX.
−15
−4
−100
475
800
250
475
800
−300
−600
−
−
−750
−820
3
12
−
10
UNIT
nA
μA
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856W
BC857W; BC858W
BC856AW; BC857AW
BC856BW; BC857BW
BC857CW
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
V
CEsat
collector-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
V
BE
C
c
C
e
f
T
F
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
EB
=
−0.5
V; I
C
= I
c
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
−
−
−
100
−
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2002 Feb 04
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856W; BC857W; BC858W
handbook, halfpage
500
MGT711
hFE
400
(1)
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
MGT712
−800
(2)
300
−600
200
(2)
−400
100
(3)
(3)
−200
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I C (mA)
0
−10
−2
−10
−1
−1
−10
−10
2
−10
3
I C (mA)
BC857AW;
V
CE
=
−5
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC857AW;
V
CE
=
−5
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
−10
4
handbook, halfpage
VCEsat
(mV)
−10
3
MGT713
handbook, halfpage
−1200
VBEsat
(mV)
−1000
−800
−600
MGT714
(1)
(2)
(3)
−10
2
(1)
−400
−200
(3) (2)
−10
−10
−1
−1
−10
−10
2
−10
3
I C (mA)
0
−10
−1
−1
−10
−10
2
−10
3
I C (mA)
BC857AW;
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
BC857AW;
I
C
/I
B
= 20.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
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