SUM90N08-4m8P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
75
r
DS(on)
(Ω)
0.0048 at V
GS
= 10 V
0.006 at V
GS
= 8 V
I
D
(A)
90
d
90
d
Q
g
(Typ)
105
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
• 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
- Half-Bridge
- Secondary Synchronous Rectification
•
Industrial
TO-263
D
G
D S
G
Top View
Ordering Information:
SUM90N08-4m8P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
75
± 20
90
d
90
d
240
70
245
300
b
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
www.vishay.com
1
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
°C/W
SUM90N08-4m8P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 75 V, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 75 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 8 V, I
D
= 20 A, T
J
= 150 °C
V
GS
= 8 V, I
D
= 20 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min
75
2
Typ
Max
Unit
4
± 250
1
50
250
V
nA
µA
A
70
0.004
0.0048
0.0096
0.0106
0.0046
58
6460
0.006
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 40 V, f = 1 MHz
571
275
105
160
pF
V
DS
= 30 V, V
GS
= 10 V, I
D
= 85 A
f = 1 MHz
V
DD
= 30 V, R
L
= 0.4
Ω
I
D
≅
85 A, V
GEN
= 10 V, R
g
= 1
Ω
32
28
1.3
23
17
34
8
2.6
35
26
52
15
85
240
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
I
F
= 30 A, V
GS
= 0 V
I
F
= 75 A, di/dt = 100 A/µs
0.85
68
2.6
88
1.5
100
4
132
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 74458
S-71663-Rev. C, 06-Aug-07
SUM90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10 thru 6 V
100
I
D
- Drain Current (A)
100
I
D
- Drain Current (A)
120
80
80
60
60
40
5V
20
40
T
C
= 125 °C
20
25 °C
- 55 °C
0
0
1
2
3
4
5
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
150
T
C
= - 55 °C
25 °C
90
125 °C
60
r
DS(on)
- On-Resistance ( )
120
g
fs
- Transcond
u
ctance (S)
0.012
0.015
Transfer Characteristics
0.009
0.006
V
GS
= 8 V
30
0.003
V
GS
= 10 V
0
0
10
20
30
40
50
60
0.000
0
20
40
60
80
100
V
GS
- Gate-to-Source
Voltage
(V)
I
D
- Drain Current (A)
Transconductance
0.020
I
D
= 20 A
r
DS(on)
- On-Resistance ( )
0.016
C - Capacitance (pF)
6560
8200
On-Resistance vs. Drain Current
C
iss
0.012
125 °C
0.008
4920
3280
0.004
25 °C
1640
C
oss
0.000
4.0
0
5.2
6.4
7.6
8.8
10.0
0
C
rss
15
30
45
60
75
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
On-resistance vs. Gate-to-Source Voltage
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
Capacitance
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SUM90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 85 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 30 V
r
DS(on)
- On-Resistance
(Normalized)
1.7
10 V
1.4
2.0
I
D
= 20 A
6
V
DS
= 60 V
4
1.1
2
0.8
0
0
23
46
69
92
115
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
150 °C
V
GS(th)
Variance (V)
On-Resistance vs. Junction Temperature
I
S
- Source Current (A)
10
0.2
I
D
= 5 mA
- 0.3
1.0
- 0.8
0.1
25 °C
- 1.3
I
D
= 250 µA
- 1.8
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
Source-Drain Diode Forward Voltage
100
I
D
= 1 mA
95
V
(BR)DSS
(normalized)
100
Threshold Voltage
I
DA
V
(A)
90
150 °C
10
25 °C
85
80
75
- 50
- 25
0
25
50
75
100
125
150
175
1
0.00001 0.0001
0.001
0.01
T
AV
(sec)
0.1
1.0
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Single Pulse Avalanche Current Capability
vs. Time
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
www.vishay.com
4
SUM90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS
180
25 °C, unless otherwise noted
1000
*Limited
by
r
DS(on)
144
100
I
D
- Drain Current (A)
108
Package Limited
I
D
- Drain C
u
rrent (A)
100
µs
1 ms
10
10 ms
100 ms
dc
1
T
C
= 25 °C
Single Pulse
72
36
0
0
25
50
75
100
125
150
0.1
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
T
C
- Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
Safe Operating Area
1
Duty Cycle = 0.5
N
ormalized Effecti
v
e Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square
Wave
Pulse Duration (sec)
10
-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?74458.
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
www.vishay.com
5
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