SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1A THRU US1M
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
C
D
F
G
A
B
MAX. .110(2.79) .177(4.50)
MIN. .100(2.54) .157(3.99)
E
F
MAX. .208(5.28) .090(2.29)
MIN. .194(4.93) .078(1.98)
H
C
D
.058(1.47) .012(0.305)
.052(1.32) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (illimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
V
RRM
Maximum Repetitive Peak Reverse Voltage
V
RMS
Maximum RMS Voltage
V
DC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
F(AV)
1.0
(T
L
=100
o
C)
Peak Forward Surge Current (8.3ms single
I
FSM
30
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
1.0
1.4
(at rated forward current)
5.0
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
200
(at rated DC blocking voltage)
T
a
=100 C
50
Maximum Reverse Recovery Time
(Note 1)
trr
20
C
J
Typical Junction Capacitance
(Note 2)
32
R
θ
(ja)
Typical Thermal Resistance
(Note 3)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
US
1A
50
35
50
US
1B
100
70
100
US
1D
200
140
200
US
1G
400
280
400
US
1J
600
420
600
US US
UNITS
1K 1M
800 1000
V
560 700
V
800 1000
V
A
A
1.7
V
µA
µA
nS
pF
o
75
10
C/W
o
C
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