DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BFV421
PNP high-voltage transistor
Product specification
Supersedes data of 1996 Dec 09
1999 Apr 23
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES
•
High voltage
•
High transition frequency
•
Low output capacitance.
APPLICATIONS
•
Primarily intended for video applications (monitors).
1
handbook, halfpage
BFV421
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: BFV420.
2
3
2
1
3
MAM285
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−140
−100
−5
−100
−100
−100
830
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
150
BFV421
UNIT
K/W
1. Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for collector lead minimum
10
×
10 mm.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−100
V
I
E
= 0; V
CB
=
−100
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−4
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−50
mA; V
CE
=
−10
V
I
C
=
−30
mA; I
B
=
−5
mA
I
C
= i
c
= 0; V
CE
=
−25
V; f = 1 MHz
I
C
=
−20
mA; V
CE
=
−20
V;
f = 100 MHz
−
−
−
150
20
−
−
150
MIN.
MAX.
−100
−10
−100
−
−
−200
2.3
−
mV
pF
MHz
UNIT
nA
µA
nA
1999 Apr 23
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BFV421
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 Apr 23
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BFV421
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
5
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