RURG8060_F085 80A, 600V Ultrafast Rectifier
October 2013
RURG8060_F085
80A, 600V Ultrafast Rectifier
Features
• High Speed Switching ( t
rr
=74ns(Typ.) @ I
F
=80A )
• Low Forward Voltage( V
F
=1.34V(Typ.) @ I
F
=80A )
• Avalanche Energy Rated
• AEC-Q101 Qaulified
80A, 600V Ultrafast Rectifier
The RURG8060_F085 is an ultrafast diode with soft
recovery characteristics (trr < 90ns). It has low forward
voltage drop and is of silicon nitride passivated ion-
implanted epitaxial planar construction.
This device is intended for use as a freewheeling/
clamping diode and rectifier in a variety of switching
power supplies and other power switching applications.
Its low stored charge and ultrafast recovery with soft
recovery characteristic minimize ringing and electrical
noise in many power switching circuits, thus reducing
power loss in the switching transistors.
Applications
• Automotive DCDC converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
Pin Assignments
1. Cathode
TO-247-2L
2. Anode
T
C
= 25°C unless otherwise noted
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
E
AVL
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Avalanche Energy (1.6A, 40mH)
Operating Junction and Storage Temperature
= 25°C unless otherwise noted
Ratings
600
600
600
@ T
C
= 25°C
80
240
50
- 55 to +175
Units
V
V
V
A
A
mJ
°C
Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz)
Thermal Characteristics
T
Symbol
R
θJC
R
θJA
C
Parameter
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Max
0.85
50
Units
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
RURG8060
Device
RURG8060_F085
Package
TO-247
Tube
-
Quantity
30
©2013 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
RURG8060_F085 Rev. C2
RURG8060_F085 80A, 600V Ultrafast Rectifier
Electrical Characteristics
T
Symbol
I
R
V
FM
t
rr2
1
C
= 25°C unless otherwise noted
Parameter
Instantaneous Reverse Current V
R
= 600V
Instantaneous Forward Voltage
Reverse Recovery Time
I
F
= 80A
Conditions
T
C
= 25
°C
T
C
= 175
°C
T
C
= 25
°C
T
C
= 175
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 175
°C
T
C
= 25
°C
Min.
-
-
-
-
-
-
-
-
-
-
50
Typ.
-
-
1.34
1.17
46
74
290
38
36
130
-
Max Units
250
2
1.6
1.4
75
90
-
-
-
-
uA
mA
V
V
ns
ns
ns
ns
ns
nC
mJ
I
F
=1A, di/dt = 100A/μs,
V
CC
= 390V
I
F
=80A, di/dt = 100A/μs,
V
CC
= 390V
t
a
t
b
Q
rr
E
AVL
Reverse Recovery Time
Reverse Recovery Charge
Avalanche Energy
I
F
=80A, di/dt = 100A/μs,
V
CC
= 390V
I
AV
=1.6A, L=40mH
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
RURG8060_F085 Rev. C2
2
www.fairchildsemi.com
RURG8060_F085 80A, 600V Ultrafast Rectifier
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
Figure 2. Typical Reverse Current vs.
Reverse Voltage
1000
100
T
C
= 175 C
T
C
= 125 C
o
o
100
Forward Current, I
F
[A]
T
C
= 175 C
Reverse Current , I
R
[
μ
A]
o
10
1
0.1
0.01
10
T
C
= 125 C
o
1
T
C
= 25 C
o
1E-3
1E-4
T
C
= 25
o
C
0.1
0.1
0.5
1.0
1.5
Forward Voltage, V
F
[V]
2.0
0
100
200
300
400
Reverse Voltage, V
R
[V]
500
600
Figure 3.Typical Junction Capacitance
1000
Figure 4. Typical Reverse Recovery Time
vs. di/dt
300
Reverse Recovery Time, t
rr
[ns]
I
F
= 80A
Typical Capacitance
at 10V = 247pF
Capacitances , Cj [pF]
800
250
200
150
100
50
0
100
T
C
= 175 C
o
o
600
T
C
= 125 C
400
T
C
= 25
o
C
200
0.1
1
10
Reverse Voltage, V
R
[V]
100
200
300
di/dt [A/
μ
s]
400
500
Figure 5. Typical Reverse Recovery
Current vs. di/dt
50
o
Figure 6. Forward Current Derating Curve
100
Average Forward Current, I
F(AV)
[A]
Reverse Recovery Current, I
rr
[A]
40
T
C
= 175 C
80
30
60
T
C
= 125 C
o
20
T
C
= 25 C
o
40
10
I
F
= 80A
20
0
100
200
300
di/dt [A/
μ
s]
400
500
0
25
50
75
100
125
150
o
Case temperature, T
C
[ C]
175
RURG8060_F085 Rev. C2
3
www.fairchildsemi.com
RURG8060_F085 80A, 600V Ultrafast Rectifier
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Recovery Charge
5000
Reverse Recovery Charge, Q
rr
[nC]
I
F
= 80A
4000
T
C
= 175 C
o
3000
T
C
= 125 C
o
2000
1000
T
C
= 25 C
o
0
100
200
300
di/dt [A/
μ
s]
400
500
Figure 8. Transient Thermal Response Curve
1
ZthJC(t), Thermal Response
D=0.5
0.2
P
DM
t
1
t
2
0.1
0.1
0.05
0.02
0.01
single pulse
* Notes :
1. Z
thJC
(t) = 0.85
0
C/W Typ.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
thJC
(t)
0.001
-5
10
10
-4
10
10
10
10
t1, Square Wave Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
RURG8060_F085 Rev. C2
4
www.fairchildsemi.com
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