Bulletin PD-20772 rev. A 07/04
10MQ040NPbF
SCHOTTKY RECTIFIER
2.1 Amp
I
F(AV)
= 2.1Amp
V
R
= 40V
Major Ratings and Characteristics
Characteristics
I
F
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 1.5Apk, T
J
=125°C
range
DC
Description/ Features
Units
A
V
A
V
°C
The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Value
2.1
40
120
0.56
- 55 to 150
Case Styles
10MQ040NPbF
SMA
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1
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10MQ040NPbF
40
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
10MQ Units
1.5
120
30
3.0
1.0
A
Conditions
50% duty cycle @ T
L
= 123 °C, rectangular wave form.
On PC board 9mm
2
island(.013mm thick copper pad area)
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated V
RRM
applied
A
mJ
A
T
J
= 25 °C, I
AS
= 1A, L = 6mH
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
10MQ
0.54
0.62
0.49
0.56
Units
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/µs
@ 1A
@ 1.5A
@ 1A
@ 1.5A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current (1)
* See Fig. 2
0.5
26
0.36
104
38
2.0
10000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
R
= 10V
DC
, T
J
= 25°C, test signal = 1Mhz
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
10MQ
- 55 to 150
80
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
R
thJA
Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.07(0.002) g (oz.)
SMA
IR1F
Similar D-64
thermal runaway condition for a diode on its own heatsink
2
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
100
Reverse Current - I
R
(mA)
10
10
1
0.1
0.01
0.001
0.0001
T
J
= 150°C
125°C
100°C
75°C
50°C
25°C
Tj = 150˚C
Instantaneous Forward Curent - I
F
(A)
Tj = 125˚C
Tj = 25˚C
0
5
10
15
20
25
30
35
40
Reverse Voltage - V
R
(V)
1
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
Junction Capacitance - C
T
(pF)
T
J
= 25°C
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
5
10
15
20
25
30
35
40
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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3
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
150
Allowable Case T
emperature - (°C)
Average Power Loss - (Watt s
)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
R Limit
MS
DC
140
130
120
110
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
90 S
quare wave (D = 0.50)
80% Rated V
R
applied
80
see note (2)
70
0
0.4
0.8
1.2
1.6
2
2.4
0
0.4
0.8
1.2
1.6
2
2.4
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non-R
epetitive S
urge Current - I
FS
M
(A)
100
At Any R
ated Load Condition
And With Rated V
RRM
Applied
Following S
urge
10
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
Outline Table
Device Marking: IR1F
CATHODE
AN OD E
1.40 (.055)
1.60 (.062)
2.50 (.098)
2.90 (.114)
1
2
4.00 (.157)
4.60 (.181)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
1 P O LA R I TY
2 PA R T N U M B ER
1.47 MIN.
(.058 MIN.)
2.10 MAX.
(.085 MAX. )
1.27 MIN.
(.050 MIN.)
5.53 (.218)
SOLDERING PAD
Outline SMA
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1F
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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