FPD1000AS
1W Packaged
Power pHEMT
FPD1000AS
1W PACKAGED POWER pHEMT
Package Style: AS
NOT FOR NEW DESIGNS
Product Description
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudo-
morphic High Electron Mobility Transistor (pHEMT), optimized for power
applications in L-Band. The surface-mount package has been optimized
for low parasitics.
Features
31dBm Output Power (P
1dB
)
@ 1.8GHz
15dB Power Gain (G
1dB
) @
1.8GHz
42dBm Output IP3
-52dBc WCDMA ACPR at
21dBm PCH
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Suitable for applications to
5GHz
Drivers or Output Stages in
PCS/Cellular Base Station
Transmitter Amplifiers
Power Applications in
WLL/WLAN and WiMax Ampli-
fiers
Max.
Unit
dBm
dBm
dB
%
dBc
800
mA
mA
ms
50
|1.4|
μA
V
V
V
25
°C/W
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
DE
FO
R
NE
Specification
Typ.
31
15.0
20
50
-46
480
650
1100
720
20
|0.7|
|6|
|20|
|0.9|
Parameter
P
1dB
Gain Compression
W
Min.
30
Electrical Specifications
Power Gain at P
1dB
(G
1dB
)
13.5
NO
T
Maximum Stable Gain (S21/S12)
Power-Added Efficiency (PAE) at P
1dB
Gain Compression
3rd-Order Intermodulation Distortion
(IM3)
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (G
M
)
Gate-Source Leakage Current (I
GSO
)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity, Channel-to-Case
(θ
CC
)
Note: T
AMBIENT
=22°C, RF specifications measured at f=1800GHz using CW signal (except as noted).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100125
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SI
GN
S
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0V
V
GS
=-3V
I
GD
=2.4mA
V
DS
>6V
Applications
Condition
V
DS
=10V, I
DS
=200mA,
Γ
S
and
Γ
L
tuned for opti-
mum IP3
V
DS
=10V, I
DS
=200mA,
Γ
S
and
Γ
L
tuned for opti-
mum IP3
V
DS
=10V, I
DS
=200mA, P
IN
=0dBm, 50Ω system
V
DS
=10V, I
DS
=200mA, P
OUT
=19dB (single-tone
level)
V
DS
=10V, I
DS
=200mA
,
f=12GHz,
Γ
S
and
Γ
L
tuned for optimum IP3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, I
DS
=2.4mA
I
GS
=2.4mA
1 of 10
FPD1000AS
Absolute Maximum Ratings
1
Parameter
Drain-Source Voltage (V
DS
)
(-3V<V
GS
<-0.5V)
2
Gate-Source Voltage (V
GS
)
(0V<V
DS
<+8V)
Drain-Source Current (I
DS
)
(For V
DS
<2V)
Gate Current (I
G
)
(Forward or reverse current)
RF Input Power (P
IN
)
7
(Under any acceptable bias state)
Channel Operating Temperature (T
CH
)
(Under any acceptable bias state)
Storage Temperature (T
STG
)
(Non-Operating Storage)
Total Power Dissipation (P
TOT
)
3, 4, 5
Rating
12
-3
I
DSS
±20
27.5
175
-40 to 150
6
Unit
V
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
mA
dBm
°C
°C
W
FO
R
Notes:
1
T
AMBIENT
=22°C unless otherwise noted; exceeding any one of these abso-
lute maximum ratings may cause permanent damage to the device.
2
Operating at absolute maximum V continuously is not recommended. If operation
D
is considered then I
DS
must be reduced in order to keep the part within its ther-
mal power dissipation limits. Therefore V
GS
is restricted to <-0.5V.
3
Total Power Dissipation to be de-rated as follows above 22°C: P
TOT
=6-
(0.04W/°C)xT
PACK
, where T
PACK
=source tab lead temperature above 22°C
(coefficient of a de-rating formula is the Thermal Conductivity).
Example: For a 55°C carrier temperature: P
TOT
=6W-(0.04x(55-22))=4.68W
4
Total Power Dissipation (P
TOT
) defined as (P
DC
+P
IN
)–P
OUT
, where P
DC
: DC Bias
Power, P
IN
: RF Input Power, P
OUT
: RF Output Power.
5
Users should avoid exceeding 80% of 2 or more Limits simultaneously.
6
Thermal Resistivity: The nominal value of 25°C/W is measured with the package
mounted on a large heatsink with thermal compound to ensure adequate
(unsoldered) contact. The package temperature is referred to the source leads.
7
Maximum RF input limit must be further limited if input VSWR>2.5:1.
8
For optimum heatsinking, metal-filled through (source) via holes should be used
directly below the central metallized ground pad on the bottom of the package.
NO
T
Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger num-
ber of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that gate bias is
applied before drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your sales representative for addi-
tional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode
devices such as the FPD1000AS.
The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of
compression is normal for this operating point.
Recommended Operating Bias Conditions
Drain-Source Voltage
5V to 10V
Quiescent Current
25% I
DSS
to 55% I
DSS
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NE
W
Biasing Guidelines
DE
SI
GN
S
DS100125
FPD1000AS
Typical Measured RF Performance
T
AMBIENT
=22°C unless otherwise stated (V
DS
=10V, I
DS
=200mA, f=1800MHz)
Power Transfer Characteristic
3.50
31.00
3.00
29.00
60.00%
60.00 %
70.00%
70.00 %
Drain Efficiency and PAE
2.50
Gain Compre ssion (dB)
27.00
Output P ower (dB m)
2.00
25.00
1.50
23.00
50.00%
50.00 %
PAE (%)
PAE
40.00%
Eff.
40.00 %
21.00
Pout
Comp Point
1.00
30.00%
30.00 %
19.00
.50
SI
GN
S
10.00%
.00%
0.00
2 .00
4 .00
6. 00
8.0 0
20.00%
20.00 %
17.00
.00
10.00 %
15.00
0.0 0
2. 00
4 .00
6.00
8.00
10.0 0
12. 00
14 .00
1 6.00
-. 50
18.00
.00%
12.0 0
14.00
1 6.00
1 8.00
10.0 0
Input P ower (dB m)
Input Power (dB m)
2 0
7.0
IMP ductsvs.Input P er
ro
ow
-15
.00
-20
.00
FPD1000AS I-V Curves
.800
.700
.600
.500
.400
.300
.200
.100
P t
ou
O tp P er (d )
u ut ow Bm
2 0
3.0
Im3 d
, Bc
-30
.00
-35
.00
Drain-Source Current (A)
2 0
5.0
-25
.00
DE
VGS = 0V
VGS = -0.25V
VGS = -0.5V
W
2 0
1.0
-40
.00
-45
.00
-50
.00
IMP u (d )
rod cts Bc
VGS = -0.75V
1 0
9.0
VGS = -1.0V
.000
0.00
1.00
2.00
3.00
4.00
5.00
VGS = -1.25V
6.00
7.00
8.00
1 0
7.0
2.0
0
NE
30
.0
4
.00
5. 0
0
6.0
0
7
.00
8. 0
0
9.0
0
1 0
0.0
11
.00
-55
.00
12
.00
Drain-Source Voltage (V)
In u Pow (d )
p t er Bm
FPD1000AS IP3 CONTOURS 1800 MHz
1.0
FO
R
FPD1000AS POWER CONTOURS 1800 MHz
0.8
0.6
2.0
0.4
1.0
0 .6
Swp Max
222
Swp Max
215
0.8
2.
0
NO
T
10 .0
0 .6
4 .0
0.4
0.8
1.0
2.0
3.0
5.0
0
.2
0
-0.2
-0
.4
.0
-0.
6
-2
Swp Min
1
-0.8
IP3 contours generated with P
IN
=11dB back-off
from P
1dB
. Local maxima for best linearity located
at:
Γ
L
=40+j55Ω and
Γ
L
=113+j70Ω with
Γ
S
=15+j12Ω
-1.0
DS100125
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
-10.0
-5.0
-4.
0
-3
.
0
0.2
48 dBm
46 dBm
44 dBm
42 dBm
40 dBm
3.0
4 .0
5.0
28 dBm
29 dBm
30 dBm
3.0
4.0
5.0
0.2
10.0
31 dBm
32 dBm
0.2
0.4
0.6
0.8 1.0
2.0
3.0 4.0 5.0
10.0
10.
0
0
-10.0
-0.2
-5.0
-4.0
-3.0
-0.4
-
0.6
-
2.0
-
0.8
-
1.0
Swp Min
1
Power contours measured at constant input power
level set to meet optimum P
1dB
at the output
match. Optimum match:
Γ
S
=3–j2Ω and
Γ
L
=25+j5Ω
3 of 10
Dra in E ffi ci ency (%)
0.
4
FPD1000AS
Typical Measured RF Performance
T
AMBIENT
=22°C unless otherwise stated (V
DS
=10V, I
DS
=200mA)
FPD1 000AS at VDS = 10V an d IDS = 200 mA
30. 0
40
FPD1000AS WCDMA ACPR 1900 MHz
DOWNLINK Pk/Avg = 9dB 0.01%
0
30
25. 0
20
- 10
20. 0
10
- 20
(dB)
10. 0
S21
MSG
-10
-20
Out put P ower
ACP R (5 MHz )
- 40
SI
GN
S
-30
ACP R (10MHz)
- 50
5. 0
-40
- 60
0. 0
0
500
1000
1500
2000
2500
3000
3500
4000
-50
Frequency (MHz)
-60
- 70
10
11
12
13
14
3
4
5
6
7
8
9
In
put Power (dBm)
AS Package Outline and Recommended PC Board Layout
3.8
1.9±0.25
2.2±0.25
0.35
2 Plcs.
0.35
2 Plcs.
FO
R
4.4
3.8
NO
T
1.3
2 Plcs.
3.2
Epoxy Fillet
All Dimnesions in mm
General Tolerance: .xx ± 0.05 .x ± 0.15
For best positional accuracy in auto pick and place
device should be referenced directly from the leads
1.5
0.15
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
0.5
2 Plcs.
NE
0 to 0.3
4 Plcs.
W
DE
Dimensions in millimeters (mm)
DS100125
ACP R (dBc)
Ga
in
15. 0
Output Power (dBm )
0
- 30
FPD1000AS
Reference Design at 1.70GHz to 1.85GHz
AutoCAD™ drawing available on request
C6
C8
R2
L2
R1
C9
L1
C1
C2
Q1
Designator
C1
C2
C4
C5
C6
C7
C8
C9
L1
L2
R1
R2
Q1
Manufacturer’s Part
ATC600S3R9CW250
ATC600S5R6CW250
ATC600S330JW250
ATC600S330JW250
DE
SI
GN
S
C4
C5
C7
2.4mm TB6
Description
Quantity
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
8
Capacitor, 3.9pF, 0603, ATC 600, tol. +0.25pF
Capacitor, 5.6pF, 0603, ATC 600, tol. +0.25pF
Capacitor, 33pF, 0603, ATC 600, tol. +5%
Capacitor, 33pF, 0603, ATC 600, tol. +5%
Capacitor, 1mF, SMD-B, Kemet, tol. +20%
Capacitor, 68pF, 0603, ATC 600
Capacitor, 1mF, SMD-B, Kemet, tol. +20%
Capacitor, 2pF, 0603, ATC 600, tol. +0.1pF
ATC600S680JW250
T491B105M035AS7015
ATC600S2R0BW250
0604HQ-1N1
0604HQ-1N1
NE
FPD1000AS
T491B105M035AS7015
FO
R
RCI-0402-27R0J
W
Inductor, 1.1nH, Coilcraft High Q Surface Mount
Inductor, 1.1nH, Coilcraft High Q Surface Mount
Resistor, 27W, 0402, IMS, tol. +5%
Resistor, 12W, 0603, IMS, tol. +5%
1W Packaged Power pHEMT, RFMD
PCB, Rogers R04003, 0.012”(0.3mm), 0.5oz. Cu
Carrier
Connector, RF, SMA End Launch, Jack Assy, Johnson
Connector, DC, 0.100 on center, 0.025 sq. posts, Tyco
Center Block for P100 Package
Screw, #0-80
RCI-0603-12R0J
NO
T
DS100125
PC-SP-000010-006
TF-SP-000012
142-0711-841
AMP-103185-2
TF-SP-000003
Note: 10mil to 12mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive via plug-
ging material in order to achieve optimal heatsinking.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 10
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
