FDW2501N
March 2004
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
•
6 A, 20 V.
R
DS(ON)
= 0.018
Ω
@ V
GS
= 4.5V
R
DS(ON)
= 0.028
Ω
@ V
GS
= 2.5V
•
Extended V
GSS
range (±12V) for battery applications.
•
High performance trench technology for extremely
low R
DS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
G2
S2
S2
D2
G1
S1
S1
D1
Pin 1
1
2
3
4
8
7
6
5
TSSOP-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±12
(Note 1a)
Units
V
V
A
W
°C
6
30
1.0
0.6
-55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
125
208
°C/W
Package Marking and Ordering Information
Device Marking
2501N
Device
FDW2501N
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
©2004
Fairchild Semiconductor Corporation
FDW2501N Rev E(W)
FDW2501N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min Typ Max Units
20
12
1
±100
V
mV/°C
µA
nA
Off Characteristics
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V,
V
GS
=
±12
V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
I
D
= 6.0 A
V
GS
= 2.5 V,
I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 6.0A, T
J
=125°C
V
GS
= 4.5 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 6.0 A
0.4
0.9
-3.2
15.5
19.6
20
1.5
V
mV/°C
18
28
29
mΩ
I
D(on)
g
FS
30
32
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
1290
315
170
pF
pF
pF
Ω
f = 1.0 MHz
2.0
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
10
15
26
9.5
18
27
47
19
17
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 6.0 A,
12
2.4
3.3
Drain–Source Diode Characteristics and Maximum Ratings
t
rr
Q
rr
I
S
V
SD
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I
F
= 6.0 A,
d
iF
/d
t
= 100 A/µs
20
6.7
(Note 2)
nS
nC
0.83
1.2
A
V
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 0.83 A
Voltage
0.7
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2501N Rev E(W)
FDW2501N
Typical Characteristics
30
V
GS
= 4.5V
25
I
D
, DRAIN CURRENT (A)
3.5V
20
2.0V
15
2.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
V
GS
= 2.0V
1.6
1.4
2.5V
1.2
3.0V
3.5V
1
4.0V
4.5V
10
5
1.5V
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.8
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
25
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 6.0A
V
GS
= 4.5V
1.4
I
D
= 3.0A
0.04
1.2
0.03
1
T
A
= 125 C
0.02
o
0.8
T
A
= 25
o
C
0.01
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 3. On-Resistance Variation with
Temperature.
30
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
DS
= 5V
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
25
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
1
20
25
o
C
0.1
15
-55
o
C
0.01
10
T
A
= 125 C
5
o
-55
o
C
25
o
C
0.001
0
0.5
1
1.5
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2501N Rev E(W)
FDW2501N
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 6.0A
8
V
DS
= 5V
6
15V
4
CAPACITANCE (pF)
10V
1800
f = 1MHz
V
GS
= 0 V
1500
C
iss
1200
900
600
C
oss
300
2
C
rss
0
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
25
30
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
100us
I
D
, DRAIN CURRENT (A)
10
100ms
1s
1
10s
DC
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 208
o
C/W
T
A
= 25 C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θJA
= 208°C/W
T
A
= 25°C
1ms
10ms
40
30
20
0.1
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
R
θJA
(t) = r(t) * R
θJA
R
θJA
=208 °C/W
P(pk)
0.02
0.01
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2501N Rev E(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
ActiveArray™
FAST
Bottomless™
FASTr™
CoolFET™
FPS™
CROSSVOLT™
FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™ GTO™
E
2
CMOS™
HiSeC™
EnSigna™
I
2
C™
FACT™
ImpliedDisconnect™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
DISCLAIMER
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
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TruTranslation™
UHC™
UltraFET
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I9
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