10 ampere complementary silicon power transistors 60, 80 volts
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | Motorola ( NXP ) |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | LEADFORM OPTIONS ARE AVAILABLE |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 10 A |
集电极-发射极最大电压 | 80 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 40 |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | PNP |
功耗环境最大值 | 50 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 40 MHz |
VCEsat-Max | 1 V |
D45H11 | D45H8 | D44H11 | D44H8 | D44H5 | D45H4 | D45H2 | |
---|---|---|---|---|---|---|---|
描述 | 10 ampere complementary silicon power transistors 60, 80 volts | 10 ampere complementary silicon power transistors 60, 80 volts | 10 ampere complementary silicon power transistors 60, 80 volts | 10 ampere complementary silicon power transistors 60, 80 volts | 10A, 45V, NPN, Si, POWER TRANSISTOR, TO-220AB | 10A, 45V, PNP, Si, POWER TRANSISTOR, TO-220AB | 10A, 30V, PNP, Si, POWER TRANSISTOR, TO-220AB |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A | 10 A |
集电极-发射极最大电压 | 80 V | 60 V | 80 V | 60 V | 45 V | 45 V | 30 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 40 | 40 | 40 | 40 | 40 | 20 | 40 |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | PNP | PNP | NPN | NPN | NPN | PNP | PNP |
功耗环境最大值 | 50 W | 50 W | 50 W | 50 W | 50 W | 50 W | 50 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 40 MHz | 40 MHz | 50 MHz | 50 MHz | 50 MHz | 40 MHz | 40 MHz |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | - |
厂商名称 | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | - |
其他特性 | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE | LEADFORM OPTIONS ARE AVAILABLE | - | - | - |
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