MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA20H8994M
BLOCK DIAGRAM
896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA20H8994M is a 20-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 896- to 941-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>20W,
η
T
>25% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 896-902/ 935-941MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA20H8994M-E01
RA20H8994M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA20H8994M
MITSUBISHI ELECTRIC
1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
RATING
17
6
100
40
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
PARAMETER
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=896-902/ 935-941MHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.5V, P
in
=25-70mW,
P
out
=1 to 25W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=20W (V
GG
control),
Load VSWR=8:1
V
DD
=12.5V, V
GG
=5V, P
in
=50mW
P
out
=20W(V
GG
control)
V
DD
=12.5V
P
in
=50mW
CONDITIONS
MIN
TYP
MAX
UNIT
MHz
W
%
896-902/ 935-941
20
25
-30
3:1
1
No parasitic oscillation
No degradation or
destroy
dBc
—
mA
—
—
All parameters, conditions, ratings, and limits are subject to change with out notice.
RA20H8994M
MITSUBISHI ELECTRIC
2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
2
nd
, 3 HARMONICS versus FREQUENCY
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
out
(W)
60
50
-20
-30
V
DD
=12.5V
P
i n
=50mW
50
ρ
in
(-)
P
out
@V
GG
=5V
η
T
(%)
40
30
20
10
ρ
in
@P
out
=20W
0
885
895
905
915
925
935
FREQUENCY f(MHz)
945
η
T
@P
out
=20W
V
DD
=12.5V
P
in
=50mW
40
30
20
10
0
955
HARMONICS (dBc)
OUTPUT POWER P
-40
INPUT VSWR
TOTAL EFFICIENCY
-50
2
nd
@P
out
=20W
-60
3
@P
out
=20W
-70
885
895
905
915
925
935
FREQUENCY f(MHz)
945
955
rd
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
out
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DD
(A)
60
out
(dBm)
24
20
16
12
I
DD
f=902MHz,
V
DD
=12.5V,
V
GG
=5V
50
POWER GAIN Gp(dB)
40
30
20
10
0
-15
-10
POWER GAIN Gp(dB)
Gp
Gp
OUTPUT POWER P
DRAIN CURRENT I
40
30
20
10
0
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=896MHz,
V
DD
=12.5V,
V
GG
=5V
16
12
8
4
0
OUTPUT POWER P
8
4
0
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
50
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
DD
(A)
60
out
(dBm)
24
DD
(A)
20
16
12
50
Gp
P
out
20
16
12
40
30
20
10
0
-15
I
DD
f=935MHz,
V
DD
=12.5V,
V
GG
=5V
POWER GAIN Gp(dB)
40
30
20
10
0
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=941MHz,
V
DD
=12.5V,
V
GG
=5V
DRAIN CURRENT I
8
4
0
OUTPUT POWER P
8
4
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V (V)
DD
14
16
P
out
f=902MHz,
V
GG
=5V,
P
in
=50mW
I
DD
16
14
DD
(A)
70
60
50
40
30
20
10
0
2
OUTPUT POWER P
DRAIN CURRENT I
I
D D
OUTPUT POWER P
10
8
P
out
DD
(A)
f=896MHz,
V
GG
=5V,
P
i n
=50mW
14
12
12
10
8
6
4
2
0
DRAIN CURRENT I
DRAIN CURRENT I
6
4
2
0
4
6
8
10
12
DRAIN VOLTAGE V
D
(V)
D
14
16
RA20H8994M
MITSUBISHI ELECTRIC
3/9
DRAIN CURRENT
I
DD
(A)
25 April 2003
50
P
out
20
P
out
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
P
out
f=941MHz,
V
GG
=5V,
P
i n
=50mW
16
14
DD
(A)
70
60
50
40
30
20
10
0
2
OUTPUT POWER P
DRAIN CURRENT I
8
P
out
8
6
4
2
0
6
4
2
0
4
6
8
10
12
DRAIN VOLTAGE V
D D
(V)
14
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
10
DD
(A)
out
(W)
60
50
40
P
out
f=902MHz,
V
DD
=12.5V,
P
i n
=50mW
12
10
8
6
4
2
0
3
3.5
4
4.5
GATE VOLTAGE V (V)
GG
5
5.5
DD
(A)
50
40
f=896MHz,
V
DD
=12.5V,
P
i n
=50mW
I
D D
8
P
out
I
D D
OUTPUT POWER P
DRAIN CURRENT I
OUTPUT POWER P
30
20
10
0
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
6
4
2
0
5.5
30
20
10
0
2.5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
out
(W)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
10
DD
(A)
out
(W)
60
50
40
30
20
10
0
2.5
P
out
f=941MHz,
V
DD
=12.5V,
P
i n
=50mW
12
10
I
D D
8
6
4
2
0
5.5
DD
(A)
50
40
30
20
10
0
2.5
f=935MHz,
V
DD
=12.5V,
P
i n
=50mW
I
D D
8
P
out
OUTPUT POWER P
DRAIN CURRENT I
OUTPUT POWER P
6
4
2
0
5.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
3
3.5
4
4.5
GATE VOLTAGE V (V)
GG
5
RA20H8994M
MITSUBISHI ELECTRIC
4/9
DRAIN CURRENT I
DRAIN CURRENT I
DRAIN CURRENT I
I
D D
OUTPUT POWER P
10
DD
(A)
f=935MHz,
V
GG
=5V,
P
i n
=50mW
14
12
12
10
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA20H8994M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
RA20H8994M
MITSUBISHI ELECTRIC
5/9
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
25 April 2003
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