CZT3904 NPN
CZT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR
CZT3904, CZT3906 types are complementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-223 CASE
MAXIMUM RATINGS
(TA=25
o
C)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ
JA
CZT3904
60
40
6.0
200
2.0
-65 to +150
62.5
CZT3906
40
40
5.0
UNITS
V
V
V
mA
W
o
C
o
C/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted)
CZT3904
MIN MAX
50
60
40
6.0
0.20
0.30
0.65
0.85
0.95
40
70
100
300
60
30
CZT3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.65
0.85
0.95
60
80
100
300
60
30
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V, IC=100mA
UNITS
nA
V
V
V
V
V
V
V
308
SYMBOL
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
TEST CONDITIONS
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100µA, RS=1.0kΩ
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
CZT3904
MIN MAX
300
4.0
8.0
1.0
10
0.5
8.0
100
400
1.0
40
5.0
35
35
200
50
CZT3906
MIN MAX
250
4.5
10
2.0
12
0.1
10
100 400
3.0
60
4.0
35
35
225
75
UNITS
MHz
pF
pF
kΩ
x10 -4
µmhos
dB
ns
ns
ns
ns
All dimensions in inches (mm).
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R2
309
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