Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRB3011 Thru CZRB3100
Voltage: 11 - 100 Volts
Power: 3.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical I
D
less than 1uA above 11V
- High temperature soldering 260°C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.155(3.94)
0.130(3.30)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.203(0.10)
0.220(5.59)
0.200(5.08)
Mechanical data
- Case: JEDEC DO-214AA, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MIL-
STD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
Dimensions in inches and (maillimeter)
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
Symbol
P
D
I
FSM
T
J
,T
STG
Value
3
24
15
-55 to +150
Units
Watts
mW/°C
Amps
°C
MDS0303002A
Page 1
Surface Mount Zener Diode
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted) (V
F
=1.2Volts Max, I
F
=500mA for all types.)
COMCHIP
www.comchip.com.tw
Device
(Note 1.)
Nominal
Zener
Voltage V
Z
@ I
ZT
(Note 2.)
(Volts)
Test
current
I
ZT
(mA)
Maximum Zener Impedance
(Note 3.)
Z
ZT
@ I
ZT
(Ohms)
Leakage Current
I
R
(uA)
Z
ZK
@ I
ZK
(Ohms)
I
ZK
(mA)
V
R
(Volts)
Surge
Maximum
Current
Zener
@T
A
=25°C
Current I
ZM
(Note 4.)
Madc
Ir - mA
CZRB3011
CZRB3012
CZRB3013
CZRB3014
CZRB3015
CZRB3016
CZRB3017
CZRB3018
CZRB3019
CZRB3020
CZRB3022
CZRB3024
CZRB3027
CZRB3028
CZRB3030
CZRB3033
CZRB3036
CZRB3039
CZRB3043
CZRB3047
CZRB3051
CZRB3056
CZRB3062
CZRB3068
CZRB3075
CZRB3082
CZRB3091
CZRB3100
11
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
43
47
51
56
62
68
75
82
91
100
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
17
16
15
13
12
11
10
9.1
8.2
7.5
4
4.5
4.5
5
5.5
5.5
6
6
7
7
8
9
10
12
16
20
22
28
33
38
45
50
55
70
85
95
115
160
700
700
700
700
700
700
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
62.2
69.2
76
225
246
208
193
180
169
150
159
142
135
123
112
100
96
90
82
75
69
63
57
53
48
44
40
36
33
30
27
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.71
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms
from the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having
an rms falue equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge
current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC standards,
however, actual device capability is as described in Figure 3.
MDS0303002A
Page 2
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
30
TRANSIENT THERMAL
RESISTANCE
JUNCTION-TO-LEAD(°C/W)
20
10
7
5
3
2
1
0.7
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.3
0.0001
D=0
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
SINGLE PULSE
TJL = JL(t)PPK
REPETITIVE PULSES TJL =
JL(t,D)PPK
0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
PPK, PEAK SURGE POWER(WATTS)
1K
300
200
100
50
30
20
10
.1
.2 .3
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25°C PRIOR TO
INITIAL PULSE
IR, REVERSE LEADAGE(uAdc)
@VR AS SPECIFIED IN ELEC.
CHAR. TABLE
100
500
0.1
0.05
0.03
0.02
0.01
0.005
0.003
0.002
0.001
0.0005
0.0003
0.0002
0.0001
5
1
2 3 5
10
20
50
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
TEMPERATURE
COEFFICIENT(mV/°C ) @ IZT
8
6
4
2
0
-2
-4
3
4
6
8
10
12
RANGE
Fig. 4-TYPICAL REVERSE LEAKAGE
200
TEMPERATURE
COEFFICIENT(mV/°C) @ IZT
100
RANGE
50
40
30
20
10
VZ, ZENER VOLTAGE @IZT (VOLTS)
0
20
40
60
80
100
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
Fig. 6 - UNITS 10 TO 100 VOLTS
MDS0303002A
Page 3
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
100
100
IZ, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2 3
4
5
6 7
8
9 10
IZ, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20 30 40 50 60
70 80 90
100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
JUNCTION-LEAD THERMAL
RESISTANCE (°C/W)
80
70
60
50
40
30
20
10
0
0
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
TYPICAL THERMAL RESISTANCE
MDS0303002A
Page 4
Surface Mount Zener Diode
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
LA
is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for
LA
will
vary and depends on the device mounting method.
LA
is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+ T
JL
COMCHIP
www.comchip.com.tw
T
JL
is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
T
JL
=
LA
P
D
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ ( T
JL
) may be estimated.
Changes in voltage, Vz, can then be found from:
V =
VZ
T
J
VZ
, the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
MDS0303002A
Page 5
测试/测量
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