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CYDD04S18V18-200BBXC

产品描述sram 4M sync dual port 128kx36 90nm ddr com
产品类别存储    存储   
文件大小941KB,共53页
制造商Cypress(赛普拉斯)
标准
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CYDD04S18V18-200BBXC概述

sram 4M sync dual port 128kx36 90nm ddr com

CYDD04S18V18-200BBXC规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256
针数256
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间7.2 ns
其他特性PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V
最大时钟频率 (fCLK)200 MHz
I/O 类型COMMON
JESD-30 代码S-PBGA-B256
JESD-609代码e1
长度17 mm
内存密度4718592 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度36
湿度敏感等级3
功能数量1
端口数量2
端子数量256
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA256,16X16,40
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源1.5/1.8 V
认证状态Not Qualified
座面最大高度1.7 mm
最大待机电流0.15 A
最小待机电流1.5 V
最大压摆率0.59 mA
最大供电电压 (Vsup)1.58 V
最小供电电压 (Vsup)1.42 V
标称供电电压 (Vsup)1.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度17 mm
Base Number Matches1

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FullFlex
FullFlex™ Synchronous
DDR Dual-Port SRAM
Features
• True dual-ported memory allows simultaneous access
to the shared array from each port
• Synchronous pipelined operation with selectable
Double Data Rate (DDR) or Single Data Rate (SDR)
operation on each port
— DDR interface at 200 MHz
— SDR interface at 250 MHz
— Up to 36-Gb/s bandwidth (250 MHz * 72 bit * 2 ports)
• Selectable pipelined or flow-through mode
• 1.5V or 1.8V core power supply
• Commercial and Industrial temperature ranges
• IEEE 1149.1 JTAG boundary scan
• Available in 484-ball PBGA Packages and 256-ball
FBGA Packages
• FullFlex72 family
— 18 Mbit: 256K x 36 x 2 DDR or 256K x 72 SDR
(CYDD18S72V18)
— 9 Mbit: 128K x 36 x 2 DDR or 128K x 72 SDR
(CYDD09S72V18)
— 4 Mbit: 64K x 36 x 2 DDR or 64 x 72 SDR
(CYDD04S72V18)
• FullFlex36 family
— 36 Mbit: 512K x 36 x 2 DDR (CYDD36S36V18)
— 18 Mbit: 256K x 36 x 2 DDR (CYDD18S36V18)
— 9 Mbit: 128K x 36 x 2 DDR (CYDD09S36V18)
— 4 Mbit: 64K x 36 x 2 DDR (CYDD04S36V18)
• FullFlex18 family
— 36 Mbit: 1M x 18 x 2 DDR (CYDD36S18V18)
— 18 Mbit: 512K x 18 x 2 DDR (CYDD18S18V18)
— 9 Mbit: 256K x 18 x 2 DDR (CYDD09S18V18)
— 4 Mbit: 128K x 18 x 2 DDR (CYDD04S18V18)
• Built-in deterministic access control to manage
address collisions
— Deterministic flag output upon collision detection
— Collision detection on back-to-back clock cycles
— First Busy Address readback
• Advanced features for improved high-speed data
transfer and flexibility
— Variable Impedance Matching (VIM)
— Echo clocks
— Selectable LVTTL (3.3V), Extended HSTL
(1.4V–1.9V), 1.8V LVCMOS, or 2.5V LVCMOS I/O on
each port
— Burst counters for sequential memory access
— Mailbox with interrupt flags for message passing
— Dual Chip Enables for easy depth expansion
Functional Description
The FullFlex™ Dual-Port SRAM families consist of 4-Mbit,
9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static
RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two
ports are provided, allowing the array to be accessed simulta-
neously. Simultaneous access to a location triggers determin-
istic access control. For FullFlex72, these ports can operate
independently in DDR mode with 36-bit bus widths or in SDR
mode with 72-bit bus widths. For FullFlex36 and FullFlex18,
the ports operate in DDR mode only. Each port can be
independently configured for two pipelined stages for SDR
mode or 2.5 stages in DDR mode. Each port can also be
configured to operate in pipelined or flow-through mode in
SDR mode.
Advanced features include built-in deterministic access
control to manage address collisions during simultaneous
access to the same memory location, Variable Impedance
Matching (VIM) to improve data transmission by matching the
output driver impedance to the line impedance, and echo
clocks to improve data transfer.
To reduce the static power consumption, chip enables can be
used to power down the internal circuitry. The number of
cycles of latency before a change in CE0 or CE1 will enable
or disable the databus matches the number of cycles of read
latency selected for the device. In order for a valid write or read
to occur, both chip enable inputs on a port must be active.
Each port contains an optional burst counter on the input
address register. After externally loading the counter with the
initial address, the counter will increment the address inter-
nally.
Additional features of this device include a mask register and
a mirror register to control counter increments and
wrap-around. The counter-interrupt (CNTINT) flags notify the
host that the counter will reach maximum count value on the
next clock cycle. The host can read the burst-counter internal
address, mask register address, and busy address on the
address lines. The host can also load the counter with the
address stored in the mirror register by utilizing the retransmit
functionality. Mailbox interrupt flags can be used for message
passing, and JTAG boundary scan and asynchronous Master
Reset (MRST) are also available. The logic block diagram in
Figure 1
displays these features.
The FullFlex72 DDR family of devices is offered in a 484-ball
plastic BGA package. The FullFlex36 and FullFlex18 DDR
only families of devices are offered in both 484-ball and
256-ball fine pitch BGA packages.
Cypress Semiconductor Corporation
Document #: 38-06072 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 21, 2006

CYDD04S18V18-200BBXC相似产品对比

CYDD04S18V18-200BBXC CYDD04S18V18-167BBXC CYDD04S18V18-167BBXI
描述 sram 4M sync dual port 128kx36 90nm ddr com sram 4M sync dual port 128kx36 90nm ddr com sram 4M sync dual port 128kx36 90nm ddr ind
是否无铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合
厂商名称 Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
零件包装代码 BGA BGA BGA
包装说明 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256 17 X 17 MM, 1 MM PITCH, LEAD FREE, MO-192, FBGA-256
针数 256 256 256
Reach Compliance Code compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 7.2 ns 9 ns 9 ns
其他特性 PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V
最大时钟频率 (fCLK) 200 MHz 167 MHz 167 MHz
I/O 类型 COMMON COMMON COMMON
JESD-30 代码 S-PBGA-B256 S-PBGA-B256 S-PBGA-B256
JESD-609代码 e1 e1 e1
长度 17 mm 17 mm 17 mm
内存密度 4718592 bit 4718592 bit 4718592 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 36 36 36
湿度敏感等级 3 3 3
功能数量 1 1 1
端口数量 2 2 2
端子数量 256 256 256
字数 131072 words 131072 words 131072 words
字数代码 128000 128000 128000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C
组织 128KX36 128KX36 128KX36
输出特性 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA
封装等效代码 BGA256,16X16,40 BGA256,16X16,40 BGA256,16X16,40
封装形状 SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260
电源 1.5/1.8 V 1.5/1.8 V 1.5/1.8 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.7 mm 1.7 mm 1.7 mm
最大待机电流 0.15 A 0.15 A 0.17 A
最小待机电流 1.5 V 1.5 V 1.5 V
最大压摆率 0.59 mA 0.52 mA 0.53 mA
最大供电电压 (Vsup) 1.58 V 1.58 V 1.58 V
最小供电电压 (Vsup) 1.42 V 1.42 V 1.42 V
标称供电电压 (Vsup) 1.5 V 1.5 V 1.5 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL
端子节距 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 20 20 20
宽度 17 mm 17 mm 17 mm
Base Number Matches 1 1 1

 
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