PD-93881C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ57214SE 100K Rads (Si)
R
DS(on)
1.5Ω
I
D
1.9A
IRHQ57214SE
250V, QUAD N-CHANNEL
5
TECHNOLOGY
LCC-28
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects(SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low R
DS(on)
and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
1.9
1.2
7.6
12
0.1
±20
30
1.9
1.2
9.9
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
05/19/05
IRHQ57214SE
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
2.5
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.28
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
338
53
2.6
—
—
1.5
4.5
—
10
25
100
-100
8.0
2.1
3.4
25
20
35
20
—
—
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 1.2A
Ã
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 1.2A
Ã
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.9A
VDS = 125V
VDD = 125V, ID = 1.9A
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
Coss
Crss
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nA
nC
ns
nH
pF
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
1.9
7.6
1.2
168
771
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 1.9A, VGS = 0V
Ã
Tj = 25°C, IF = 1.9A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
10.4
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHQ57214SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (LCC-28)
Diode Forward Voltage
Min
250
2.0
—
—
—
—
—
—
100K Rads (Si)
Max
—
4.5
100
-100
10
1.45
1.5
1.2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
=0V
V
GS
= 12V, I
D
= 1.2A
V
GS
= 12V, I
D
= 1.2A
V
GS
= 0V, I
D
= 1.9A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Br
I
Au
LET
MeV/(mg/cm
2
))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
39.5
250
250
250
250
250
32.5
250
250
250
250
240
28.4
250
250
225
175
50
300
250
200
VDS
150
100
50
0
0
-5
-10
VGS
-15
-20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHQ57214SE
Pre-Irradiation
10
Drain-to-Source Current (A)
I
D
,
I
Drain-to-Source Current (A)
D
’
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
5.0V
1
1
5.0V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 1.9A
2.0
T
J
= 25
°
C
1
1.5
1.0
0.5
0.1
5.0
V DS =
15
50V
20µs PULSE WIDTH
6.0
7.0
8.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHQ57214SE
600
500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 1.9A
16
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
C, Capacitance (pF)
400
Ciss
12
300
Coss
200
8
100
4
Crss
1
10
100
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
T
J
= 150
°
C
1
10
10us
T
J
= 25
°
C
100us
1
1ms
0.1
0.2
V
GS
= 0 V
0.6
0.9
1.3
1.6
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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