BCX71J
General Purpose Transistor
PNP Silicon
Features
•
Moisture Sensitivity Level: 1
•
Pb−Free Package is Available
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COLLECTOR
3
1
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−45
−45
−5.0
−100
Unit
Vdc
Vdc
Vdc
mAdc
1
2
Symbol
P
D
Max
350
2.8
T
stg
R
qJA
150
357
Unit
mW
mW/°C
°C
°C/W
SOT−23
CASE 318
STYLE 6
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Derate above 25°C
Storage Temperature
Thermal Resistance,
Junction-to-Ambient (Note 1)
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm.
BJ M
G
G
BJ
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BCX71JLT1
BCX71JLT1G
Package
SOT−23
SOT−23
(Pb−free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 2
Publication Order Number:
BCX71J/D
BCX71J
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
E
= 1.0
mAdc,
I
E
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc)
(V
CE
= 32 Vdc, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.25 mAdc)
(I
C
= 50 mAdc, I
B
= 1.25 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
Base− Emitter On Voltage
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
Output Capacitance
(V
CE
= 10 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn−On Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
Turn−Off Time
(I
B2
= 1.0 mAdc, V
BB
= 3.6 Vdc, R1 = R2 = 5.0 kW, R
L
= 990
W)
t
on
−
t
off
−
800
150
ns
ns
h
FE
40
250
100
250
V
CE(sat)
−
−
V
BE(sat)
−0.6
−0.68
V
BE(on)
−0.6
C
obo
−
NF
−
6.0
6.0
dB
−0.75
pF
−0.85
−1.05
Vdc
−0.25
−0.55
Vdc
−
460
−
500
Vdc
−
V
(BR)CEO
−45
V
(BR)EBO
−5.0
I
CES
−
−
−20
−20
nAdc
mAdc
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
TYPICAL NOISE CHARACTERISTICS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
3.0
2.0
1.0 mA
100
mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
0.1
20
50 100 200
500
1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k 10 k
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k 10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
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BCX71J
NOISE FIGURE CONTOURS
(V
CE
= − 5.0 Vdc, T
A
= 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1.0 k
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
0.5 dB
10 Hz to 15.7 kHz
Noise Figure is Defined as:
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
NF
+
20 log10
1.0 dB
2.0 dB
3.0 dB
5.0 dB
10
20
30
50 70 100
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Wideband
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
25°C
h FE , DC CURRENT GAIN
200
−55
°C
100
80
60
40
0.003 0.005
V
CE
= 1.0 V
V
CE
= 10 V
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (mA)
2.0
3.0
5.0 7.0 10
20
30
50 70 100
Figure 6. DC Current Gain
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BCX71J
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
0.6
0.4
40
20
0
100
mA
50
mA
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
− 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
− 55°C to 25°C
50
100
25°C to 125°C
V
BE(sat)
@ I
C
/I
B
= 10
0.6
0.4
0.2
0
0.1
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5
1.0
2.0
5.0
10
20
50
100
2.4
0.1
I
C
, COLLECTOR CURRENT (mA)
0.5 1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
t
d
@ V
BE(off)
= 0.5 V
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t, TIME (ns)
100
70
50
30
20
10
−1.0
Figure 10. Temperature Coefficients
t
s
V
CC
= − 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
5.0 7.0
10
20
30
50 70
100
I
C
, COLLECTOR CURRENT (mA)
− 2.0 − 3.0 − 5.0 − 7.0 −10
− 20 − 30
I
C
, COLLECTOR CURRENT (mA)
− 50 − 70 −100
Figure 11. Turn−On Time
Figure 12. Turn−Off Time
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BCX71J
TYPICAL DYNAMIC CHARACTERISTICS
BANDWIDTH PRODUCT (MHz
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
7.0
C
ib
5.0
T
J
= 25°C
3.0
2.0
C
ob
f T, CURRENT−GAIN
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
20
hie , INPUT IMPEDANCE (k
Ω
)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
h
fe
≈
200
@ I
C
= −1.0 mA
hoe , OUTPUT ADMITTANCE (
m
mhos)
V
CE
= −10 Vdc
f = 1.0 kHz
T
A
= 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
h
fe
≈
200
@ I
C
= 1.0 mA
20
1.0 2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
100
0.2
0.5
20
1.0 2.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 15. Input Impedance
Figure 16. Output Admittance
10
4
IC, COLLECTOR CURRENT (nA)
V
CC
= 30 V
10
3
10
2
10
1
10
0
I
CEO
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 V
10
−1
10
−2
−4
0
−2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 17. Typical Collector Leakage Current
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