BCW61, BCX71
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 (NPN)
3
2
1
VPS05161
Type
BCW 61A
BCW 61B
BCW 61C
BCW 61D
BCW 61FF
BCW 61FN
BCX 71G
BCX 71H
BCX 71J
BCX 71K
Marking
BAs
BBs
BCs
BDs
BFs
BNs
BGs
BHs
BJs
BKs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1
Jul-10-2001
BCW61, BCX71
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Total power dissipation,
T
S
= 71 °C
Junction temperature
Storage temperature
Thermal Resistance
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
BCW61 BCW61FF
32
32
5
32
32
5
100
200
200
330
150
-65 ... 150
BCX71
Unit
45
45
5
mA
mA
mW
°C
V
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
V
(BR)CEO
32
45
V
(BR)CBO
32
45
V
(BR)EBO
5
-
-
-
-
-
-
-
-
-
-
BCW61/61FF
BCX71
BCW61/61FF
BCX71
2
Junction - soldering point
1)
R
thJS
240
K/W
Unit
max.
V
typ.
Jul-10-2001
BCW61, BCX71
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC Characteristics
Collector cutoff current
V
CB
= 32 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0
Collector cutoff current
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 °C
BCW61/61FF
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
BCX71
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 10 µA,
V
CE
= 5 V
h
FE
-grp.
A/G
h
FE
-grp.
B/H
h
FE
-grp.
C/J/FF
h
FE
-grp.
D/K/FN
BCW61/61FF
BCX71
Unit
max.
nA
typ.
I
CBO
-
-
I
CBO
-
-
I
EBO
h
FE
20
30
40
100
h
FE
h
FE
-grp.
A/G
h
FE
-grp.
B/H
h
FE
-grp.
C/J/FF
h
FE
-grp.
D/K/FN
-
-
-
-
-
20
20
µA
20
20
20
nA
-
-
140
200
300
460
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
120
180
250
380
h
FE
170
250
350
500
220
310
460
630
DC current gain 1)
I
C
= 50 mA,
V
CE
= 1 V
h
FE
-grp.
A/G
h
FE
-grp.
B/H
h
FE
-grp.
C/J/FF
h
FE
-grp.
D/K/FN
60
80
100
110
-
-
-
-
-
-
-
-
1) Pulse test: t
≤=
300
µ
s, D = 2%
3
Jul-10-2001
BCW61, BCX71
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Characteristics
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
Base-emitter voltage 1)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
A/G
B/H
C/J/FF
D/K/FN
Symbol
min.
V
CEsat
-
-
V
BEsat
-
-
V
BE(ON)
-
0.55
-
Values
typ.
max.
Unit
V
0.12
0.2
0.7
0.83
0.52
0.65
0.78
0.25
0.55
0.85
1.05
-
0.75
-
f
T
C
cb
C
eb
h
FE
-grp.
h
11e
-
-
-
250
3
8
-
-
-
MHz
pF
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
Open-circuit reverse voltage transf.ratio
h
FE
-grp.
h
12e
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
A/G
B/H
C/J/FF
D/K/FN
10
-4
-
-
-
-
1.5
2
2
3
-
-
-
-
1) Pulse test: t
≤=
300
µ
s, D = 2%
4
Jul-10-2001
Short-circuit input impedance
k
BCW61, BCX71
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC Characteristics
typ.
max.
Unit
Short-circuit forward current transf.ratio
h
FE
-grp.
h
21e
A/G
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
B/H
C/J/FF
D/K/FN
-
-
-
-
-
200
260
330
520
-
-
-
-
S
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
A/G
B/H
C/J/FF
D/K/FN
-
-
-
-
18
24
30
50
-
-
-
-
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
h
FE
-grp.
F
A/K
FF/FN
h
FE
-grp.
V
n
-
-
-
2
1
-
-
2
0.11
µV
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 10 ... 50 Hz
FF/FN
5
Jul-10-2001
Open-circuit output admittance
h
FE
-grp.
h
22e
dB
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
