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MT47H128M8HR-25L

产品描述ddr2 sdram
文件大小9MB,共131页
制造商Micron(美光)
官网地址http://www.micron.com/
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MT47H128M8HR-25L概述

ddr2 sdram

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1Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= +1.8V ±0.1V, V
DDQ
= +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
Configuration
256 Meg x 4 (32 Meg x 4 x 8 banks)
128 Meg x 8 (16 Meg x 8 x 8 banks)
64 Meg x 16 (8 Meg x 16 x 8 banks)
FBGA package (Pb-free) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
FBGA package (lead solder) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
Timing – cycle time
1.875ns @ CL = 7 (DDR2-1066)
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 4 (DDR2-667)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
Self refresh
Standard
Low-power
Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (–40°C
T
C
95°C;
–40°C
T
A
85°C)
Automotive (–40°C
T
C
, T
A
105ºC)
Revision
Note:
Marking
256M4
128M8
64M16
HR
HQ
CF
HW
HV
JN
-187E
-25E
-25
-3E
-3
-37E
None
L
None
IT
AT
:G/:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.

 
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