PTMA080302M
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
30 W, 28 V, 700 – 1000 MHz
Description
The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS
integrated amplifier intended for use in all typical modulation formats
from 700 to 1000 MHz. This device is offered in a 20-lead, thermally-
enhanced, overmolded package for cool and reliable operation.
PTMA080302M
Package PG-DSO-20-63
Broadband Performance
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
fixture tuned for 920 - 960 MHz
Features
•
•
Designed for wide RF modulation bandwidths, and
low memory effects
On-chip matching, integrated input DC block,
50-ohm input and ~ 8-ohm output
Typical GSM/EDGE performance, 940 MHz, 28 V
- Output power = 15 W Avg.
- Linear gain = 31 dB
- Power added efficiency = 36%
- EVM at 15 W = 1.7 %
- ACPR at 400 kHz = –61 dBc
- ACPR at 600 kHz = –73 dBc
Typical CW performance at 940 MHz, 28 V
- Output power at P
1dB
= 32 W
- Linear gain (1 W) = 31 dB
- Power added efficiency = 46%
Capable of handling 10:1 VSWR @ 28 V, 30 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
RoHS-compliant package
35
30
25
10
5
•
Gain
0
-5
-10
-15
20
15
10
5
0
700
800
900
1000
Retu Loss (dB)
urn
Gain (dB)
•
Return Loss
-20
-25
1100
•
•
•
Frequency (MHz)
RF Characteristics
GSM/EDGE Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA, ƒ = 920 to 960 MHz, P
OUT
= 15 W Avg.
Characteristic
Gain
Power-added Efficiency
Error Vector Magnitude
Symbol
G
ps
PAE
EVM (RMS)
Min
—
—
—
Typ
31
36
1.7
Max
—
—
—
Unit
dB
%
%
table continued next page
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
GSM/EDGE Specifications
(cont.)
V
DD
= 28 V, I
DQ1
= 150 mA, I
DQ2
= 280 mA, ƒ = 920 to 960 MHz, P
OUT
= 15 W Avg.
Characteristic
Modulation Spectrum
400 kHz offset
600 kHz offset
Gain Flatness
Symbol
ACPR
1
ACPR
2
ΔG
Min
—
—
—
Typ
–61
–73
0.2
Max
—
—
—
Unit
dBc
dBc
dB
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 150 mA, I
DQ2
= 280 mA, P
OUT
= 15 W Avg, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Third Order Intermodulation Distortion
Symbol
G
ps
Min
31
32.5
—
Typ
32
35
–33
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD3
Single-tone Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 150 mA, I
DQ2
= 280 mA, ƒ = 940 MHz
Characteristic
Gain
Power-added Efficiency
Output Power
Symbol
G
ps
PAE
P
1dB
Min
—
—
—
Typ
32
46
31
Max
—
—
—
Unit
dB
%
W
DC Characteristics
Stage 1 Characteristics
Drain Leakage Current
Conditions
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
—
—
—
—
2.0
Typ
—
—
—
1.85
2.5
Max
1.0
10.0
1.0
—
3.0
Unit
µA
µA
µA
Ω
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ1
= 120 mA,
Data Sheet
– DRAFT ONLY
2 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
DC Characteristics
(cont.
)
Stage 2 Characteristics
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.0
Typ
—
—
—
—
0.25
2.5
Max
—
1.0
10.0
1.0
—
3.0
Unit
V
µA
µA
µA
Ω
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ2
= 280 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T
CASE
= 70°C, 30 W CW)
Stage 1
Stage 2
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
16
129.5
0.74
–40 to +150
6.7
1.7
Unit
V
V
°C
dBm
W
W/°C
°C
°C/W
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type and Version
PTMA080302M V1 R250
Order Code
PTMA080302MV1R250AUMA1
Package and Description
PG-DSO-20-63, Copper heat slug, plastic EMC body
Shipping
Tape & Reel, 250 pcs.
Data Sheet
– DRAFT ONLY
3 of 11
Rev. 07, 2012-10-24
PTMA080302M
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
EDGE Modulation Spectrum Performance
at selected temperatures
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
ƒ = 942 MHz
Edge Modula
ation Spectrum (dBc)
Power Add Efficiency (%)
ded
EDGE Modulation Spectrum Performance
at selected frequencies
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA
Edge Modul
lation Spectrum (dBc)
45
40
35
30
25
20
15
10
5
0
30
32
34
36
38
40
42
44
Power Ad
dded Efficiency (%)
45
40
35
30
25
20
15
10
5
0
30
32
34
36
38
40
42
44
-40
-40
–25 °C
25 °C
90 °C
400 kHz
Efficiency
-45
-50
-55
-60
-65
-70
-75
-80
-85
925.2 MHz
942.6 MHz
959.8 MHz
400 kHz
Efficiency
-45
-50
-55
-60
-65
600 kHz
600 kHz
-70
70
-75
-80
-85
Output Power (dBm)
Output Power (dBm)
EDGE EVM
at selected temperatures
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series show ƒ = 942 MHz
70
14
70
EDGE EVM
V
DD
= 28 V, I
DQ1
= 120 mA, I
DQ2
= 280 mA,
series are at selected frequencies
14
12
10
Power Add Efficiency (%)
ded
Power Adde Efficiency (%)
ed
60
50
40
30
20
10
0
30
–25 °C
25 °C
90 °C
Error Vecto Magnitude(%)
or
12
10
8
60
50
40
30
20
10
0
30
Efficiency
8
6
4
Efficiency
EVM
6
4
2
0
EVM
2
0
32
34
36
38
40
42
44
32
34
36
38
40
42
44
Output Power (dBm)
Output Power (dBm)
Data Sheet
– DRAFT ONLY
5 of 11
Rev. 07, 2012-10-24
Error Vect Magnitude(%)
tor
925.2 MHz
942.6 MHz
959.8 MHz
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