Datasheet> 器件分类 > 分立半导体> 晶体管> CMLT5554LEADFREE

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CMLT5554LEADFREE: 产品描述Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小518KB，共2页; 制造商Central Semiconductor; 标准

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CMLT5554LEADFREE概述

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6

CMLT5554LEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Central Semiconductor
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.6 A
集电极-发射极最大电压	160 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小直流电流增益 (hFE)	30
JESD-30 代码	R-PDSO-F6
JESD-609代码	e3
湿度敏感等级	1
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN (315)
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	10
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

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CMLT5554

SURFACE MOUNT SILICON

DUAL, COMPLEMENTARY

HIGH VOLTAGE TRANSISTOR

w w w. c e n t r a l s e m i . c o m

The CENTRAL SEMICONDUCTOR CMLT5554

consists of one 2N5551 NPN silicon transistor and one

individual isolated complementary 2N5401 PNP silicon

transistor, manufactured by the epitaxial planar process

and epoxy molded in an SOT-563 surface mount

package. This device has been designed for high

voltage amplifier applications.

MARKING CODE: 5C4

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

NPN (Q1)

180

160

6.0

PNP (Q2)

160

150

5.0

UNITS

°C

°C/W

600

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN MAX

ICBO

VCB=120V

ICBO

VCB=100V

ICBO

VCB=120V, TA=100°C

ICBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

hfe

VCB=100V, TA=150°C

IC=100μA

IC=1.0mA

IE=10μA

IC=10mA,

IC=50mA,

IC=10mA,

IB=1.0mA

IB=5.0mA

IB=1.0mA

180

160

6.0

100

0.15

0.2

1.0

250

300

6.0

200

8.0

160

150

5.0

100

0.2

0.5

1.0

240

300

6.0

200

8.0

UNITS

μA

IC=50mA, IB=5.0mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=200μA, RS=10Ω,

f=10Hz to 15.7kHz

MHz

R2 (12-February 2014)

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