CMOS Static RAM
1 Meg (128K x 8-Bit)
Revolutionary Pinout
Features
Description
IDT71124
◆
◆
◆
◆
◆
◆
◆
128K x 8 advanced high-speed CMOS static RAM
JEDEC revolutionary pinout (center power/GND) for
reduced noise.
Equal access and cycle times
– Commercial: 12/15/20ns
– Industrial: 15/20ns
One Chip Select plus one Output Enable pin
Bidirectional inputs and outputs directly TTL-compatible
Low power consumption via chip deselect
Available in a 32-pin 400 mil Plastic SOJ.
The IDT71124 is a 1,048,576-bit high-speed static RAM organized as
128K x 8. It is fabricated using high-performance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs. The JEDEC centerpower/GND pinout reduces noise
generation and improves system performance.
The IDT71124 has an output enable pin which operates as fast as 6ns,
with address access times as fast as 12ns available. All bidirectional inputs
and outputs of the IDT71124 are TTL-compatible and operation is from
a single 5V supply. Fully static asynchronous circuitry is used; no clocks
or refreshes are required for operation.
The IDT71124 is packaged in a 32-pin 400 mil Plastic SOJ.
Functional Block Diagram
A
0
•
•
•
A
16
ADDRESS
DECODER
•
•
•
1,048,576-BIT
MEMORY ARRAY
I/O
0
- I/O
7
•
8
8
I/O CONTROL
8
,
WE
OE
CS
CONTROL
LOGIC
3514 drw 01
APRIL 2013
1
©2013 Integrated Device Technology, Inc.
DSC-3514/11
IDT71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout
Commercial and Industrial Temperature Ranges
Pin Configuration
A
0
A
1
A
2
A
3
CS
I/O
0
I/O
1
V
CC
GND
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
1
32
2
31
3
30
4
29
28
5
6 SO32-3 27
26
7
25
8
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
GND
V
CC
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
T
A
T
BIAS
T
STG
Rating
Terminal Voltage with
Respect to GND
Operating Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output Current
Value
-0.5 to +7.0
(2)
0 to +70
-55 to +125
-55 to +125
1.25
50
Unit
V
o
o
C
C
C
o
,
P
T
I
OUT
W
mA
3514 tbl 02
3514 drw 02
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliabilty.
2. V
TERM
must not exceed Vcc + 0.5V.
SOJ
Top View
Truth Table
CS
L
L
L
H
V
HC
(3)
OE
L
X
H
X
X
(1,2)
Capacitance
Symbol
C
IN
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
8
8
Unit
pF
pF
3514 tbl 03
WE
H
L
H
X
X
I/O
DATA
OUT
DATA
IN
High-Z
High-Z
High-Z
Function
Read Data
Write Data
Output Disabled
Deselected - Standby (I
SB
)
Deselected - Standby (I
SB1
)
3514 tbl 01
C
I/O
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
NOTES:
1. H = V
IH
, L = V
IL
, x = Don't care.
2. VLC = 0.2V, VHC = VCC -0.2V.
3. Other inputs
≥
VHC or
≤
VLC.
Recommended Operating
Temperature and Supply Voltage
Grade
Commercial
Industrial
Temperature
0°C to +70°C
–40°C to +85°C
GND
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
3514 tbl 04
Recommended DC Operating
Conditions
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
___ _
___ _
Max.
5.5
0
V
CC
+0.5
0.8
Unit
V
V
V
V
3514 tbl 05
6.42
2
IDT 71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
(V
CC
= 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
Test Conditions
V
CC
= Max., V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
, V
OUT
= GND to V
CC
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
Min.
___
___
___
Max.
5
5
0.4
___
Unit
µA
µA
V
V
3514 tbl 06
2.4
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
71124S12
Symbol
I
CC
I
SB
Parameter
Dynamic Operating Current
CS
< V
IL
, Outputs Open, V
CC
= Max., f = f
MAX
(2)
Standby Power Supply Current (TTL Level)
CS
> V
IH
, Outputs Open, V
CC
= Max., f = f
MAX
(2)
Full Standby Power Supply Current (CMOS Level)
CS
> V
HC
, Outputs Open, V
CC
= Max., f = 0
(2)
V
IN
< V
LC
or V
IN
> V
HC
Com'l.
160
40
10
71124S15
Com'l.
155
40
10
Ind.
155
40
10
71124S20
Com'l.
140
40
10
Ind.
140
40
10
Unit
mA
mA
mA
DC Electrical Characteristics
(1)
I
SB1
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
)
;
f = 0 means no address input lines are changing.
3514 tbl 07
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
3ns
1.5V
1.5V
See Figure 1 and 2
3514 tbl 08
AC Test Loads
5V
480Ω
DATA
OUT
30pF
255Ω
3514 drw 03
5V
480Ω
DATA
OUT
.
5pF*
255Ω
3514 drw 04
.
*Including jig and scope capacitance.
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW,
and t
WHZ
)
6.42
3
IDT71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(V
CC
= 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
71124S12
(2)
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
t
CLZ
(1)
t
CHZ
(1)
t
OE
t
OLZ
(1)
t
OHZ
(1)
t
OH
t
PU
(1)
t
PD
(1)
WRITE CYCLE
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
(1)
t
WHZ
(1)
Write Cycle Time
Address Valid to End of Write
Chip Select to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Data Hold Time
Output active from End-of-Write
Write Enable to Output in High-Z
12
8
8
0
8
0
6
0
3
0
____
____
____
____
____
____
____
____
____
71124S15
Min.
Max.
71124S20
Min.
Max.
Unit
Parameter
Min.
Max.
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select to Output in Low-Z
Chip Deselect to Output in High-Z
Output Enable to Output Valid
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
12
____
____
____
15
____
____
____
20
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
____
15
15
____
20
20
____
3
0
____
3
0
____
3
0
____
6
6
____
7
7
____
8
8
____
0
0
4
0
____
0
0
4
0
____
0
0
4
0
____
5
____
____
5
____
____
7
____
____
12
15
20
15
12
12
0
12
0
8
0
3
0
____
____
____
____
____
____
____
____
____
20
15
15
0
15
0
9
0
4
0
____
____
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3514 tbl 09
5
5
8
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
2. There is no industrial temperature offering for the 12ns speed grade.
6.42
4
IDT 71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 1
(1)
t
RC
ADDRESS
t
AA
OE
t
OE
CS
t
OLZ
(5)
(5)
(3)
t
ACS
t
CLZ
DATA
OUT
t
CHZ (5)
t
OHZ (5)
HIGH IMPEDANCE
DATA
OUT
VALID
t
PD
.
V
CC
SUPPLY I
CC
CURRENT I
SB
t
PU
3514 drw 05
Timing Waveform of Read Cycle No. 2
(1,2,4)
t
RC
ADDRESS
t
AA
t
OH
DATA
OUT
PREVIOUS DATA
OUT
VALID
t
OH
DATA
OUT
VALID
3514 drw 06
.
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Device is continuously selected,
CS
is LOW.
3. Address must be valid prior to or coincident with the later of
CS
transition LOW; otherwise t
AA
is the limiting parameter.
4.
OE
is LOW.
5. Transition is measured ±200mV from steady state.
6.42
5
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