SE3450/5450
GaAs Infrared Emitting Diode
FEATURES
•
TO-46 metal can package
•
Choice of flat window or lensed package
•
90¡ or 20¡ (nominal) beam angle option
•
935 nm wavelength
•
Wide operating temperature range
(- 55¡C to +125¡C)
•
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
INFRA-83.TIF
DESCRIPTION
The SE3450/5450 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3450 series has flat window cans
providing a wide beam angle, while the SE5450 series
has glass lensed cans providing a narrow beam angle.
The TO-46 packages offer high power dissipation
capability and are ideally suited for operation in hostile
environment.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
SE3450
.188 (4.77)
DIA.
.178 (4.52)
.219 (5.56)
DIA.
.208 (5.28)
.500
(12.70)
MIN.
1
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
NOM
.048(1.22)
.160 (4.06)
DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.028(.71)
.018
(.460)
2
DIA.
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_003a.ds4
SE5450
.188 (4.77)
DIA.
.178 (4.52)
.219 (5.56)
DIA.
.208 (5.28)
.500
(12.70)
MIN.
1
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
NOM
.048(1.22)
.160 (4.06)
DIA.
.137 (3.48)
.015
(0.36)
.200
.247 (6.27)
.224 (5.89)
5.08
.028(.71)
.018
(.460)
DIA.
2
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_003b.ds4
24
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3450/5450
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
100 mA
150 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
25
SE3450/5450
GaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement (SE3450)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60
-45
-30
-15
0
+15 +30 +45 +60
Fig. 2
gra_017.ds4
Radiant Intensity vs
Angular Displacement (SE5450)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40
-30
-20
-10
0
gra_023.ds4
Relative intensity
Relative intensity
+10 +20 +30 +40
Angular displacement - degrees
Fig. 3
Radiant Intensity vs
Forward Current
250
200
150
100
50
0.0
0
100
200
300
400
500
Angular displacement - degrees
Fig. 4
Forward Voltage vs
Forward Current
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0
10 20 30 40 50 60 70 80 90 100
gra_018.ds4
gra_205.ds4
Forward current - mA
Fig. 5
Forward Voltage vs
Temperature
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
-50
-25
0
25
50
75
100
125
I
F
= 100 mA
Forward voltage - V
Normalized radiant
intensity - %
Pulsed
Forward current - mA
Fig. 6
gra_206.ds4
Spectral Bandwidth
gra_005.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870
Forward voltage - V
Relative intensity
890
910
930
950
970
990
1010
Temperature - °C
Wavelength - nm
26
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3450/5450
GaAs Infrared Emitting Diode
Fig. 7
Coupling Characteristics
SE3450 with SD3443
1.0
Fig. 8
gra_021.ds4
Coupling Characteristics
SE5450 with SD5443
1.0
gra_024.ds4
Normalized light
current
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
Normalized light
current
0.8
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
6
7
8
9
Window-to-window distance - inches
Fig. 9
Radiant Intensity vs
Case Temperature
5.0
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
-75
-50
-25
0
25
50
75
100
125
Lens-to-lens distance - inches
gra_022.ds4
Normalized radiant intensity
Normalized to
I
F
= 100 mA
T
A
= 25 °C
Case temperature - °C
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
27
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
