SE2470
AlGaAs Infrared Emitting Diode
FEATURES
•
Miniature, hermetically sealed, pill style, metal
can package
•
18¡ (nominal) beam angle
•
Wide operating temperature range
(- 55¡C to +125¡C)
•
Higher power output than GaAs at equivalent
drive currents
•
Ideal for direct mounting to printed circuit boards
•
880 nm wavelength
•
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
INFRA--1.TIF
DESCRIPTION
The SE2470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a
hermetically sealed, glass lensed, metal can package.
This package directly mounts in double sided PC
boards. These devices typically exhibit 70% greater
power intensity than gallium arsenide devices at the
same forward current.
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals
±0.020(0.51)
DIM_002.ds4
20
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE2470
AlGaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
75 mA
125 mW [À]
-55¡C to 125¡C
-65¡C to 150¡C
260¡C
SCHEMATIC
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.19 mW/¡C,when soldered into a double sided printed circuit
board.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
21
SE2470
AlGaAs Infrared Emitting Diode
Fig. 1
Radiant Intensity vs
Angular Displacement
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40
-30
-20
-10
0
+10 +20 +30 +40
Fig. 2
gra_111.ds4
Radiant Intensity vs
Forward Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
10.0
20.0
30.0
40.0
gra_016.ds4
Normalized radiant
intensity
Relative intensity
50.0
Angular displacement - degrees
Fig. 3
Forward Voltage vs
Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0
10
20
30
40
50
60
70
80
Forward current - mA
Fig. 4
Forward Voltage vs
Temperature
1.6
gra_204.ds4
gra_202.ds4
Forward voltage - V
Forward voltage - V
1.5
1.4
1.3
1.2
1.1
1.0
-50
I
F
= 20 mA
-25
0
25
50
75
100
125
Forward current - mA
Fig. 5
Spectral Bandwidth
gra_011.ds4
Temperature - °C
Fig. 6
Coupling Characteristics
with SD2440
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
gra_015.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
760
800
840
880
920
960
1000
Relative intensity
Wavelength - nm
Normalized light
current
Lens-to-lens separation - inches
22
h
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE2470
AlGaAs Infrared Emitting Diode
Fig. 7
Normalized Power Output vs
Temperature
2.0
1.8
1.6
1.4
1.2
1.0
.8
.6
.4
.2
0
-50
-25
0
+25
+50
+75 +100 +125
gra_131.ds4
Normalized power output
I
F
= 50 mA
I
F
= 20 mA
T
A
- Ambient temperature - (°C)
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
23
stm32/stm8
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