SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
7
FEATURES
* Suitable for AF drivers and output stages
* High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE
PARTMARKING DETAILS
BCP52
BCP55
BCP55 10
BCP55 16
C
BCP55
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
60
60
5
1.5
1
2
-55 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
60
60
5
100
20
10
0.5
1.0
40
25
63
100
250
100
160
100
160
250
MHz
TYP.
MAX.
UNIT
V
V
V
nA
CONDITIONS.
I
C
=100
µ
A
I
C
= 10mA *
I
E
=10
µ
A
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=5V
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=2V*
I
C
=150mA,
I
C
=500mA,
I
C
=150mA,
I
C
=150mA,
V
CE
=2V*
V
CE
=2V*
V
CE
=2V*
V
CE
=2V*
µ
A
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(on)
V
V
Static Forward Current h
FE
Transfer Ratio
BCP55-10
BCP55-16
Transition Frequency
f
T
I
C
=50mA, V
CE
=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 17
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