Philips Semiconductors
Product specification
Hex inverter
FEATURES
•
Wide supply voltage range from 1.2 V to 3.6 V
•
Inputs accept voltages up to 5.5 V
•
CMOS low-power consumption
•
Direct interface with TTL levels
•
In accordance with JEDEC standard no. 8-1A
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; t
r
= t
f
≤
2.5 ns; T
amb
= 25
°C.
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
INPUT
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
nY
H
L
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance per gate
notes 1 and 2
CONDITIONS
C
L
= 50 pF; V
CC
= 3.3 V
DESCRIPTION
74LVCU04A
The 74LVCU04A is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
The 74LVCU04A is a general purpose hex inverter. Each
of the six inverters is a single stage with unbuffered
outputs.
TYPICAL
2.1
5.5
8.5
ns
pF
pF
UNIT
2004 Mar 12
2
Philips Semiconductors
Product specification
Hex inverter
74LVCU04A
handbook, halfpage
1A
1
VCC
14
13
12
6A
6Y
5A
5Y
handbook, halfpage
1
1A
1Y
2
1Y
2A
2Y
3A
3Y
2
3
4
5
6
7
Top view
GND
8
4Y
3
2A
2Y
4
5
3A
3Y
6
GND
(1)
11
10
9
9
4A
4Y
8
11
4A
13
MNA983
5A
5Y
10
6A
6Y
12
MNA926
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
Fig.2 Pin configuration DHVQFN14.
Fig.3 Logic symbol.
handbook, halfpage
1
1
2
3
1
4
handbook, halfpage
VCC VCC
5
1
6
100
Ω
nA
nY
9
1
8
MNA927
11
1
10
13
1
MNA925
12
Fig.4 Logic symbol (IEC).
Fig.5 Schematic diagram (one inverter).
2004 Mar 12
4
Philips Semiconductors
Product specification
Hex inverter
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
ambient temperature
input rise and fall times
in free air
V
CC
= 1.2 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
CONDITIONS
for maximum speed performance
for low-voltage applications
MIN.
2.7
1.2
0
0
−40
0
0
74LVCU04A
MAX.
3.6
3.6
5.5
V
CC
+125
20
10
V
V
V
V
UNIT
°C
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
, I
GND
T
stg
P
tot
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70
°C
the value of P
tot
derates linearly with 8 mW/K.
For (T)SSOP14 packages: above 60
°C
the value of P
tot
derates linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
the value of P
tot
derates linearly with 4.5 mW/K.
PARAMETER
supply voltage
input diode current
input voltage
output diode current
output voltage
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40 °C
to +125
°C;
note 2
V
I
< 0 V
note 1
V
O
> V
CC
or V
O
< 0 V
note 1
V
O
= 0 V to V
CC
CONDITIONS
−
−0.5
−
−0.5
−
−
−65
−
MIN.
−0.5
MAX.
+6.5
−50
+6.5
±50
±50
±100
+150
500
V
mA
V
mA
mA
mA
°C
mW
UNIT
V
CC
+ 0.5 V
2004 Mar 12
5
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