High Speed InGaAs p-i-n Photodiode
13PD100-S
Sheet 1 of 3
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a
metallized ceramic substrate, is the largest standard device enabling a 1GHz frequency cutoff. Planar
semiconductor design and dielectric passivation provide very low noise performance. Reliability is assured
by 100% purge burn-in (200°C, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to
customer-supplied or other specified packages.
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
DEVICE CHARACTERISTICS
Parameters
Operating Voltage
Dark Current
Capacitance
Responsivity
Responsivity
Rise/Fall
Frequency Response
(–3dB)
1
–5V
–5V
1300nm
1500nm
0.8
0.5
0.9
0.9
1
0.5
Test Conditions
Minimum
Typical
Maximum
–20
2
Units
Volts
nA
pF
A/W
ns
GHz
ABSOLUTE MAXIMUM RATINGS
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
5mA
500µA
–40°C to +85°C
–40°C to +85°C
250°C
Sheet 1 of 3
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
Mechanical Specifications
Ceramic Packages
S1 Submount
0.025 sq. pod
0.050
Sheet 2 of 3
0.010
0.050
0.020 (2 places)
Chip
0.160
Bond Wire
0.060
0.080
ANODE (bias –)
CATHODE (bias +)
Custom packaging is also available.
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
Sheet 2 of 3
Mechanical Specifications
Ceramic Packages
S2 Submount
Sheet 3 of 3
0.110
0.035
CATHODE (Bias +)
Au Plated
0.010
0.035
0.065
ANODE (Bias –)
Au Plated
0.060
Bond Wire
CATHODE (Bias +)
Au Plated
0.010
Au Plated Backside
Custom packaging is also available.
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
Sheet 3 of 3