70MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
• Al
2
O
3
BDC
• Very low stay inductance design for high speed operation
MTP
• UL pending
• Speed 60 kHz to 150 kHz
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
600 V
2.1 V
70 A
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation, IGBT
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 78 °C
T
C
= 25 °C
T
C
= 78 °C
TEST CONDITIONS
MAX.
600
100
70
300
A
300
53
200
± 20
V
2500
347
W
139
UNITS
V
Document Number: 94469
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
70MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Warp 2 Speed IGBT), 70 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 70 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 140 A
V
GE
= 15 V, I
C
= 70 A, T
J
= 150 °C
Gate threshold voltage
Collector to emitter leaking current
Gate to emitter leakage current
V
GE(th)
I
CES
I
GES
I
C
= 0.5 mA
V
GE
= 0 V, I
C
= 600 V
V
GE
= 0 V, I
C
= 600 V, T
J
= 150 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
3
-
-
-
TYP.
-
2.1
2.8
2.7
-
-
-
-
MAX.
-
2.4
3.4
V
3
6
0.7
mA
10
± 250
nA
UNITS
V
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Input capacitance
Output capacitane
Reverse transfer capacitance
Reverse BIAS safe operating area
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
td
on
t
r
td
off
t
f
td
on
t
r
td
off
t
f
C
ies
C
oes
C
res
RBSOA
I
C
= 70 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, T
J
= 25 °C
R
g
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
R
g
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
1.1
0.9
2
1.27
1.13
2.4
314
49
308
68
312
50
320
78
8000
790
110
Fullsquare
MAX.
690
250
130
-
-
-
mJ
-
-
-
-
-
-
-
ns
R
g
= 10
Ω
I
C
= 70 A, V
CC
= 480 V, V
GE
= 15 V, L = 200 μH
Energy losses include tail and diode reverse
recovery, T
J
= 150 °C
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
T
J
= 150 °C, I
C
= 300 A
V
CC
= 400 V, V
P
= 600 V
R
g
= 22
Ω,
V
GE
= + 15 V to 0 V
-
-
-
-
-
-
-
pF
nC
UNITS
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2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94469
Revision: 01-Mar-10
70MT060WHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Warp 2 Speed IGBT), 70 A
THERMISTOR SPECIFICATIONS
PARAMETER
Resistance
Sensitivity index of the
thermistor material
SYMBOL
R
0 (1)
β
(1)(2)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
TEST CONDITIONS
MIN.
-
-
TYP.
30
4000
MAX.
-
-
UNITS
kΩ
K
Notes
(1)
T , T are thermistor´s temperatures
0
1
R
0
1
1
(2)
----- = exp
β
⎛
----
–
----
⎞
, temperature in Kelvin
-
-
-
⎝
T
R
T
⎠
1
0
1
DIODE SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
C
= 70 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
C
= 140 A, V
GE
= 0 V
I
C
= 70 A, V
GE
= 0 V, T
J
= 150 °C
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/μs
T
J
= 125 °C
V
CC
= 200 V, I
C
= 70 A
dI/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
1.64
2.1
1.69
96
9.4
440
140
14
950
MAX.
2.1
2.4
1.9
126
12.8
750
194
19
1700
ns
A
nC
ns
A
nC
V
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction
temperature range
IGBT, Diode
Thermistor
T
J
T
Stg
IGBT
Junction to case
Diode
Case to sink per module
Mounting torque to heatsink
Weight
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
SYMBOL
TEST CONDITIONS
MIN.
- 40
- 40
- 40
-
-
-
TYP.
-
-
-
-
-
0.06
3 ± 10 %
66
MAX.
150
125
125
0.36
0.8
-
Nm
g
°C/W
°C
UNITS
Storage temperature range
Document Number: 94469
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
70MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Warp 2 Speed IGBT), 70 A
I
C
- Collector to Emitter Current (A)
1000
V
GE
= 15 V
16
V
GE
-
Gate
to Emitter Voltage (V)
14
12
10
8
6
4
2
0
V
CC
= 480 V
100
T
J
= 25 °C
T
J
= 150 °C
10
1
0.0
1.0
2.0
3.0
4.0
5.0
94469_04
0
200
400
600
800
1000
94469_01
V
CE
- Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
O
G
- Total
Gate
Charge (nC)
Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage
140
120
100
DC
80
60
40
20
0
0
20
40
60
80
100
120
I
F
- Instantaneous Forward Current (A)
Allowable Case Temperature (°C)
160
1000
100
T
J
= 150 °C
10
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
94469_02
Maximum DC Collector Current (A)
94469_05
V
FM
- Forward Voltage Drop (V)
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Maximum Collector Current vs. Case Temperature
V
CE
- Collector to Emitter Voltage (V)
4.5
4.0
I
C
= 140 A
3.5
3.0
2.5
2.0
I
C
= 30 A
1.5
1.0
20
40
60
80
100
120
140
160
I
C
= 70 A
I
CES
- Collector to Emitter Current (mA)
10
150 °C
1.0
0.1
0.01
25 °C
0.001
0.0001
200
300
400
500
600
94469_03
T
J
- Junction Temperature (°C)
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
94469_06
V
CES
- Collector to Emitter Voltage (V)
Fig. 6 - Typical Zero Gate Voltage Collector Current
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94469
Revision: 01-Mar-10
70MT060WHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Warp 2 Speed IGBT), 70 A
I
C
- Collector to Emitter Current (mA)
4.5
350
300
250
200
150
100
50
0
0
94469_10
4.0
25 °C
V
GEth
(V)
3.5
125 °C
3.0
2.5
0.1
94469_07
1.0
100
200
300
400
500
600
700
I
C
(mA)
Fig. 7 - Typical Gate Threshold Voltage
I
C
- Collector to Emitter Voltage (V)
Fig. 10 - Reverse BIAS SOA, T
J
= 150 °C
1400
1200
160
V
R
= 200 V
140
1000
I
F
= 70 A, 125 °C
E
on
Energy (μJ)
600
E
off
400
t
rr
(ns)
800
120
100
I
F
= 70 A, 25 °C
80
200
0
0
94469_08
20
40
60
80
94469_11
60
100
1000
I
C
- Collector to Emitter Current (A)
Fig. 8 - Typical Energy Losses vs. I
C
( T
J
= 150 °C)
dI
F
/dt (A/µs)
Fig. 11 - Typical Reverse Recovery Time vs. dI
F
/dt
1000
t
f
40
V
R
= 200 V
35
t
d(off)
30
Switching
Time (ns)
I
RRM
(A)
25
20
15
10
100
t
r
I
F
= 70 A, 125 °C
t
d(on)
I
F
= 70 A, 25 °C
10
0
94469_09
20
40
60
80
94469_12
5
100
1000
I
C
- Collector to Emitter Current (A)
Fig. 9 - Switching Time vs. I
C
dI
F
/dt (A/μs)
Fig. 12 - Typical Reverse Recovery Current vs. dI
F
/dt
Document Number: 94469
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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