Si4703DY
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
30
r
DS(on)
(W)
0.046 @ V
GS2
= 10 V
0.066 @ V
GS2
= 4.5 V
I
D
(A)
4.0
3.3
5, 6, 7
V
IN
Q2
8
SO-8
S
1
V
ON/OFF
S
2
S
2
1
2
3
4
Top View
Ordering Information: Si4703DY
Si4703DY-T1 (with Tape and Reel)
8
7
6
5
V
HV
V
IN
V
IN
V
IN
3, 4
S
2
V
HV
V
ON/OFF
2
Q1
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
Q2 Gate-Drive Voltage Referenced to S1 or S2
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode
Conduction
a
Continuous
a
Pulsed
b
Symbol
V
IN
V
HV
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
30
20
8
4.0
"20
−1.15
1.20
−55
to 150
3
Unit
V
A
W
_C
kV
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t = steady state)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJF
Typical
85
29
Maximum
105
35
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 30 V, V
ON/OFF
= 0 V, V
HV
= 0 V
I
S
=
−1.15
A
0.7
1
1.1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
On-Resistance (Q2)
On-State (Q2) Drain-Current
r
DS(on)
I
D(on)
V
ON/OFF
= 0 V, I
D
= 4 A, V
HV
= 10 V, V
S2
= 0 V
V
ON/OFF
= 0 V, I
D
= 3.3 A, V
HV
= 4.5 V, V
S2
= 0 V
V
IN-OUT
v
0.1 V, V
IN
= 5 V, V
ON/OFF
= 0 V, V
HV
= 10 V
10
0.035
0.054
0.046
0.066
W
A
Notes
a. Surface Mounted on FR4 Board.
b. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
Document Number: 71316
S-32422—Rev. E, 24-Nov-03
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1
Si4703DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.8
1.5
1.2
(V)
(V)
1.2
T
J
= 125_C
0.8
T
J
= 25_C
0.4
0.9
0.6
T
J
= 25_C
0.3
0.0
0
5
10
I
D
−
(A)
15
20
25
V
ON/OFF
= 0 V
V
HV
= 10 V
V
S2
= 0 V
V
DS
vs. I
D
2.0
V
ON/OFF
= 0 V
V
HV
= 4.5 V
V
S2
= 0 V
V
DS
vs. I
D
1.6
V
DS
T
J
= 125_C
V
DS
0.0
0
5
10
15
I
D
−
(A)
20
25
0.25
V
DS
vs. V
HV
1.0
V
DS
vs. V
HV
0.20
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
(V)
0.8
V
ON/OFF
= 0 V
I
DS
= 5 A
V
S2
= 0 V
V
DS
(V)
0.15
0.6
V
DS
0.10
T
J
= 125_C
0.05
T
J
= 25_C
0.00
0
3
6
V
HV
−
(V)
9
12
0.4
T
J
= 125_C
0.2
T
J
= 25_C
0.0
0
3
6
V
HV
−
(V)
9
12
0.25
r
DS
vs. V
HV
Normalized On-Resistance vs. Junction Temperature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
r
SS(on)
−
On-Resistance (
W
)
r
DS(on)
−
On-Resistance (
W)
(Normalized)
0.20
V
ON/OFF
= 0 V
I
DS
= 1 A
V
S2
= 0 V
V
IN
= 10 V
0.15
V
HV
= 4.5 V
0.10
T
J
= 125_C
0.05
T
J
= 25_C
0.00
0
3
6
V
HV
−
(V)
9
12
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
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Document Number: 71316
S-32422—Rev. E, 24-Nov-03
Si4703DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
t
d(on)
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
Time (
mS)
V
IN
= 5 V
V
IN
= 3.3 V
4
10
25
t
rise
Variation with R
G
/V
IN
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
V
IN
= 5 V
8
20
Time (
mS)
6
15
10
V
IN
= 3.3 V
2
5
0
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
0.30
t
d(off)
Variation with R
G
/V
IN
150
t
f
Variation with R
G
/V
IN
V
IN
= 5 V
0.24
V
IN
= 3.3 V
Time (
mS)
120
V
IN
= 3.3 V
Time (
mS)
0.18
V
IN
= 5 V
0.12
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
90
60
V
ON/OFF
= 2 V
V
HV
= 12 V
C
o
= 10
mF
I
L
= 1 A
0.06
30
0.00
10
30
50
70
R
G
(kW)
90
110
0
10
30
50
70
R
G
(kW)
90
110
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 80_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 71316
S-32422—Rev. E, 24-Nov-03
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Si4703DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL APPLICATION CIRCUIT
12 V
5, 6, 7
V
IN
8
V
HV
2
V
ON/OFF
1
S
1
Q1
Q2
3, 4
S
2
R
L
5-V BUS
NOTE: Voltage difference between pull-up voltage, 12 V, and BUS voltage, 5 V, should be greater than 4.5 V.
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Document Number: 71316
S-32422—Rev. E, 24-Nov-03
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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