BPV21F(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV21F(L) is a high speed and high sensitive PIN
photodiode in a plasic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ
p
= 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
948387
Features
Wide viewing angle
ϕ
= ± 65°
Fast response times
e4
Low junction capacitance
TO-92 plastic package with IR filter
Filter designed for 950 nm transmission
Option "L" long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
•
•
•
•
•
•
•
Large radiant sensitive area (A = 5.7 mm
2
)
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
≤
5s
T
amb
≤
25 °C
Test condition
Symbol
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
60
215
100
- 55 to + 100
- 55 to + 100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
Test condition
I
F
= 50 mA
I
R
= 100
μA,
E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
Symbol
V
F
V
(BR)
I
ro
C
D
R
S
60
2
48
900
30
Min
Typ.
1
Max
1.3
Unit
V
V
nA
pF
Ω
Document Number 81507
Rev. 1.6, 13-Nov-06
www.vishay.com
1
BPV21F(L)
Vishay Semiconductors
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
Rise Time
Fall Time
Cut-Off Frequency
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 12 V, R
L
= 1 kΩ,
λ
= 870 nm
V
R
= 12 V, R
L
= 1 kΩ,
λ
= 950 nm
Test condition
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 10 V
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 950 nm
Symbol
V
o
TK
Vo
I
k
I
ra
TK
Ira
s(λ)
s(λ)
ϕ
λ
p
λ
0.5
η
NEP
D
*
t
r
t
f
f
c
f
c
27
Min
Typ.
380
- 2.6
35
38
0.1
Max
Unit
mV
mV/K
μA
μA
%/K
0.35
0.6
± 65
950
870 to 1050
90
4 x 10
-14
5 x 10
12
70
70
4
1
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/W
ns
ns
MHz
MHz
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
1000
I
ro
- Reverse Dark Current (nA)
I
ra rel
- Relative Reverse Light Current
1.4
1.2
100
V
R
= 5
V
λ
= 950 nm
1.0
10
0.8
V
R
= 10
V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
94
8403
T
amb
- Ambient Temperature (°C)
94
8409
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
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Document Number 81507
Rev. 1.6, 13-Nov-06
BPV21F(L)
Vishay Semiconductors
S ( )
rel
- Relative Spectral Sensitivity
10
1000
I
ra
- Reverse Light Current (µA)
1.2
1.0
0.8
0.6
0.4
0.2
0
750
100
10
1
V
R
= 5
V
λ
= 950 nm
0.1
0.01
94
8421
0.1
1
Ee - Irradiance (mW/cm
2
)
850
950
1050
1150
94
8408
-
Wavelength
(nm)
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Relative Spectral Sensitivity vs. Wavelength
100
I
ra
– Reverse Light Current (μA)
0°
λ
= 950 nm
1 mW/cm
2
0.5 mW/cm
2
10°
20°
30°
S
rel
- Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
10
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
1
0.1
94
8422
1
10
100
94
8406
0.6
0.4
0.2
0
0.2
0.4
0.6
V
R
– Reverse
Voltage
(V)
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
80
C
D
– Diode Capacitance (pF)
60
E=0
f = 1 MHz
40
20
0
0.1
94
8423
1
10
100
V
R
– Reverse
Voltage
(V)
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81507
Rev. 1.6, 13-Nov-06
www.vishay.com
3
BPV21F(L)
Vishay Semiconductors
Package Dimensions in mm
9612202
Package Dimensions in mm
9612207
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4
Document Number 81507
Rev. 1.6, 13-Nov-06
BPV21F(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81507
Rev. 1.6, 13-Nov-06
www.vishay.com
5
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