Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
Overview
CNB1302 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
Unit : mm
Mark for indicating
anode side
C0.5
1
3
9.0±1.0
2.0±0.2
Chip
center
Ultraminiature, thin type : 2.7
×
3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Fast response : t
r
, t
f
= 20µs (typ.)
Easy interface for control circuit
9.0±1.0
2.7±0.2
0.4
4-0.7
4-0.5
±0.1
2
1.8
4
Features
2.0±0.2
0.5
0.15
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Output (Photo Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
Symbol Ratings
V
R
I
F
P
D
*1
Unit
V
mA
mW
mA
V
V
mW
˚C
˚C
*1
3
50
75
20
30
5
50
–25 to +85
I
C
V
CEO
V
ECO
P
C
*2
T
opr
T
stg
–30 to +100
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
0.67 mW/˚C at Ta
≥
25˚C.
Electrical Characteristics
(Ta = 25˚C)
Paramwter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Output characteristics Collector cutoff current
Collector current
Leakage current
Transfer
characteristics Response time
Symbol
V
F
I
R
C
t
I
CEO
I
D
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
V
CE
= 10V
90
20
0.4
*2
Output
Conditions
I
C*1, *2
V
CC
= 5V, I
F
= 10mA, R
L
= 100Ω, d = 1mm
V
CC
= 5V, I
F
= 10mA, R
L
= 100Ω
t
r*3
, t
f*4
V
CC
= 5V, I
C
= 0.1mA, R
L
= 100Ω
Collector to emitter saturation voltage V
CE(sat)
I
F
= 20mA, I
C
= 0.1mA
*1
I
C
classifications
Class
I
C
(µA)
Q
90 to 220
R
180 to 440
S
360 to 880
*3
Time
*4
Time
,,
,
V
CC
required for the output current to increase from 10% to 90% of its final value
I
F
required for the output current to decrease from 90% to 10% of its initial value
,,
,,
1
2 3
4
Pin connection
Applications
1.5±0.2
3.4±0.3
min
typ
1.3
0.01
30
max
1.5
10
200
880
200
Unit
V
µA
pF
nA
µA
nA
µs
V
,,,
,,,
,,,
,,,
,,
,,
current measurement method
I
C
R
L
Evaporated Al
Glass plate
(t = 1mm)
1
CNB1302
Reflective Photosensors (Photo Reflectors)
I
F
, I
C
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
I
F
= 50mA
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
V
F
(V)
1.2
10mA
Forward current, collector current
40
40
30
Forward current
30
Forward voltage
1mA
0.8
20
I
C
20
0.4
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
C
— I
F
800
V
CE
= 5V
Ta = 25˚C
R
L
= 100Ω
d = 1mm
600
d = 1mm
Ta = 25˚C
I
C
— V
CE
160
I
F
= 20mA
I
C
— Ta
V
CC
= 5V
I
F
= 10mA
R
L
= 100Ω
120
I
C
(µA)
600
I
C
(µA)
400
15mA
300
10mA
8mA
100
6mA
4mA
2mA
400
Relative output current
Collector current
Collector current
I
C
(%)
500
80
200
200
40
0
0
8
16
24
0
0
2
4
6
8
0
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
V
CE
= 10V
10
3
t
r
, t
f
— I
C
100
V
CC
= 5V
Ta = 25˚C
: t
r
: t
f
10
2
R
L
= 2kΩ
1kΩ
10
100Ω
1
I
C
— d
V
CC
= 5V
Ta = 25˚C
I
F
= 10mA
I
C
(%)
t
r
, t
f
(µs)
1
80
10
–2
Rise time , fall time
10
–1
Relative output current
60
Dark current
40
10
–3
20
10
–4
– 40 – 20
0
20
40
60
80
100
10
–1
10
–2
10
–1
1
10
0
0
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
2
,,
,
d
2
4
6
8
10
I
CEO
(µA)
Distance d (mm)
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