BFP460
Low Noise Silicon Bipolar RF Transistor
•
General purpose low noise amplifier
for low voltage, low current applications
•
High ESD robustness, typical 1500 V (HBM)
•
Low minimum noise figure 1.1 dB at 1.8 GHz
•
High linearity: output compression point
OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP460
Parameter
Marking
Pin Configuration
ABs
1 = E 2 = C 3 = E 4=B -
Symbol
V
CEO
Package
-
SOT343
Value
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4.2
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
92°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
15
15
1.5
70
7
230
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
S
is
measured on the collector lead at the soldering point to the pcb
2013-09-13
1
BFP460
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
250
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Symbol
min.
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
V
CE
= 2 V,
V
BE
= 0
V
CE
= 5 V,
V
BE
= 0 ,
T
A
= 85°C
Verified by random sampling
Collector-base cutoff current
V
CB
= 2 V,
I
E
= 0
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0,5 V,
I
C
= 0
DC current gain
V
CE
= 3 V,
I
C
= 20 mA , pulse measured
1
For
V
(BR)CEO
I
CES
4.5
5.8
-
V
nA
-
-
-
I
CBO
-
-
I
EBO
h
FE
-
90
-
1
2
1000
30
40
1
-
1
120
30
30
500
160
-
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
2013-09-13
2
BFP460
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 30 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
V
CE
= 2V,
I
C
= 3 mA ,
Z
S
=
Z
Sopt,
f
= 100 MHz
V
CE
= 3V,
I
C
= 5 mA ,
Z
S
=
Z
Sopt,
f
= 1.8 GHz
V
CE
= 3V,
I
C
= 5 mA ,
Z
S
=
Z
Sopt,
f
= 3 GHz
NF
min
-
-
-
0.7
1.1
1.2
-
-
-
dB
C
eb
-
0.55
-
C
ce
-
0.28
-
C
cb
-
0.32
0.45
pF
16
typ.
22
max.
-
GHz
Unit
2013-09-13
3
BFP460
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Maximum power Gain
1)
I
C
= 3 mA,
V
CE
= 1.5 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 1,8 GHz
f
= 3 GHz
Transducer gain
I
C
= 3 mA,
V
CE
= 1.5 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 3 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 20 mA,
f
= 100 MHz
V
CE
= 3 V,
I
C
= 20 mA,
f
= 1.8 GHz
1dB compression point at output
V
CE
= 3V,
I
C
= 20mA ,
Z
S
=Z
L
= 50
Ω
,
f
= 100 MHz
V
CE
= 3V,
I
C
= 20mA,
Z
S
=Z
L
= 50
Ω
,
f
= 1.8 GHz
V
CE
= 3V,
I
C
= 35mA,
Z
S
=Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
Unit
max.
dB
typ.
G
max
-
-
-
|S
21e
|
2
-
-
-
IP3
-
-
P
-1dB
-
-
-
9.5
11.5
13
-
-
-
23.5
27.5
-
-
20
15
10.5
-
-
-
26.5
17.5
12.5
-
-
-
dB
dBm
1/2
ma = |
S
21 /
S
12| (k-(k²-1) ),
G
ms =
S
21 /
S
12
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
2013-09-13
4
BFP460
Total power dissipation
P
tot
=
ƒ
(T
S
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
260
V
220
200
0.7
pF
160
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
A
150
C
CB
0.4
0.3
0.2
0.1
0
0
180
0.5
2
4
6
8
10
V
14
V
CB
Third order Intercept Point
IP3
=
ƒ
(I
C
)
(Output, Z
S
= Z
L
= 50
Ω
)
V
CE
= parameter,
f
= 1800 MHz
33
dBm
29
27
25
4V
3V
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 1 GHz
V
CE
= parameter
24
GHz
2V
3-4V
20
18
1V
I
P3
f
T
23
21
19
17
15
13
11
9
7
5
0
10
20
30
40
mA
2V
16
14
12
10
1V
8
6
4
0
55
10
20
30
40
mA
60
I
C
I
C
2013-09-13
5
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