HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Features
Saturated Output Power: 27.5 dBm @ 21% PAE
High Output IP3: 34.5 dBm
High Gain: 20.5 dB
DC Supply: +5V @ 400 mA
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
Typical Applications
The HMC757LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
9
Amplifiers - lineAr & power - smT
• Military & Space
Functional Diagram
General Description
The HMC757LP4E is a three stage GaAs pHEMT
MMIC 1 Watt Power Amplifier which operates be-
tween 16 and 24 GHz. The HMC757LP4E provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% PAE from a +5V supply. The RF I/Os
are DC blocked and matched to 50 Ohms. The 4x4
mm plastic package eliminates the need for wirebon-
dig, and is compatible with surface mount manufactur-
ing techniques.
Electrical Specifications,
T
A
= +25° C, Vdd = +5V, Idd = 400mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical.
[2] Measurement taken at Pout / Tone = +16 dBm
(IP3)
[2]
24.5
18.5
Min.
Typ.
16 - 24
20.5
0.028
11
12
26.5
27.5
34.5
400
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain vs. Temperature
28
+25C
+85C
-40C
Broadband Gain &
Return Loss vs. Frequency
30
20
24
RESPONSE (dB)
10
0
-10
16
-20
-30
12
14
16
18
20
22
FREQUENCY (GHz)
24
26
28
12
16
18
20
GAIN (dB)
S21
S11
S22
20
9
22
24
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25C
+85C
-40C
Output Return Loss vs. Temperature
0
-4
RETURN LOSS (dB)
-8
-12
-16
-20
-24
+25C
+85C
-40C
-4
RETURN LOSS (dB)
-8
-12
-16
-20
16
18
20
FREQUENCY (GHz)
22
24
16
18
20
FREQUENCY (GHz)
22
24
P1dB vs. Temperature
31
P1dB vs. Supply Voltage
33
5V
6V
7V
29
P1dB (dBm)
P1dB (dBm)
31
27
29
25
+25C
+85C
-40C
27
23
25
21
16
18
20
FREQUENCY (GHz)
22
24
23
16
18
20
FREQUENCY (GHz)
22
24
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
Amplifiers - lineAr & power - smT
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Psat vs. Supply Voltage
33
Psat vs. Temperature
33
+25C
+85C
-40C
31
Psat (dBm)
31
Psat (dBm)
29
29
9
Amplifiers - lineAr & power - smT
27
27
5V
6V
7V
25
25
23
16
18
20
FREQUENCY (GHz)
22
24
23
16
18
20
FREQUENCY (GHz)
22
24
P1dB vs. Supply Current (Idd)
31
Psat vs. Supply Current (Idd)
31
29
P1dB (dBm)
Psat (dBm)
29
27
27
350mA
375mA
400mA
25
350mA
375mA
400mA
25
23
23
21
16
18
20
FREQUENCY (GHz)
22
24
21
16
18
20
FREQUENCY (GHz)
22
24
Output IP3 vs.
Temperature, Pout/Tone = +16 dBm
45
Output IP3 vs.
Supply Current, Pout/Tone = +16 dBm
45
40
IP3 (dBm)
+25C
+85C
-40C
40
IP3 (dBm)
350mA
375mA
400mA
35
35
30
30
25
16
18
20
FREQUENCY (GHz)
22
24
25
16
18
20
FREQUENCY (GHz)
22
24
9-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Output IM3 @ Vdd = +5V
70
60
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +16 dBm
45
40
IP3 (dBm)
5.0V
6.0V
7.0V
50
IM3 (dBc)
40
30
20
10
35
30
9
5
7
9
11
13
15
17
19
21
23
Pout/TONE (dBm)
25
16
18
20
FREQUENCY (GHz)
22
24
0
Output IM3 @ Vdd = +6V
70
60
50
IM3 (dBc)
40
30
20
10
0
5
7
9
11
13
15
17
19
21
23
Pout/TONE (dBm)
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
Output IM3 @ Vdd = +7V
70
60
50
IM3 (dBc)
40
30
20
10
0
5
7
9
11
13
15
17
19
21
23
Pout/TONE (dBm)
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
Power Compression @ 20 GHz
35
Pout (dBm), GAIN (dB), PAE (%)
30
25
20
15
10
5
0
-18
Pout
Gain
PAE
Reverse Isolation vs. Temperature
0
-10
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
-80
+25C
+85C
-40C
-13
-8
-3
2
7
12
16
18
20
FREQUENCY (GHz)
22
24
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
Amplifiers - lineAr & power - smT
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain & Power vs.
Supply Voltage @ 20 GHz
35
Gain (dB), P1dB (dBm), Psat (dBm)
Gain & Power vs.
Supply Current @ 20 GHz
35
Gain (dB), P1dB (dBm), Psat (dBm)
30
30
25
25
9
Amplifiers - lineAr & power - smT
Gain
P1dB
Psat
20
Gain
P1dB
Psat
20
15
15
10
350
10
360
370
380
Idd (mA)
390
400
5
5.5
6
Vdd (V)
6.5
7
Power Dissipation
2.5
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
POWER DISSIPATION (W)
2.3
2.1
1.9
1.7
1.5
-18
-14
-10
-6
-2
2
6
10
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 40 mW/°C above 85 °C)
Thermal Resistance
(channel to exposed ground paddle)
Storage Temperature
Operating Temperature
7V
23 dBm
150 °C
2.7 W
24.85 C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+5.0
+5.5
+6.0
Idd (mA)
400
400
400
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 400 mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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