HMC751LC4
v01.0514
SMT pHEMT LOW NOISE
AMpLIFIER, 17 - 27 GHz
Typical Applications
The HMC751LC4 is ideal for:
Features
Noise Figure: 2.2 dB
Gain: 25 dB
OIP3: +25 dBm
Single Supply: +4V @ 73 mA
50 Ohm Matched Input/Output
RoHS Compliant 4 x 4 mm Package
AMPLIFIERS - LOW NOISE - SMT
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military
Functional Diagram
General Description
The HMC751LC4 is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) housed in
a leadless “Pb free” RoHS compliant SMT package.
The HMC751LC4 provides 25 dB of small signal
gain, 2.2 dB of noise figure and output IP3 of +25 dBm.
The P1dB output power of +13 dBm also enables the
LNA to function as a LO driver for balanced, I/Q or
image reject mixers. The HMC751LC4 allows the use
of surface mount manufacturing techniques.
Electrical Specifications,
T
A
= +25° C, Vdd 1, 2, 3 = +4V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +4V)
50
22
Min.
Typ.
17 - 20
24
0.025
2.2
17
16
13
15
25
73
90
50
2.8
23
Max.
Min.
Typ.
20 - 27
25
0.028
2.0
15
15
13
15
25
73
90
2.6
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC751LC4
v01.0514
SMT pHEMT LOW NOISE
AMpLIFIER, 17 - 27 GHz
Gain vs. Temperature
30
28
26
GAIN (dB)
GAIN (dB)
24
22
20
18
16
14
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Gain vs. Supply Voltage
30
26
24
22
20
18
16
14
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
4.5 V
4.0 V
3.5 V
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Noise Figure vs. Temperature
10
Output Ip3 vs. Temperature
30
28
8
NOISE FIGURE (dB)
+25 C
+85 C
-40 C
26
IP3 (dBm)
24
22
20
18
16
+25 C
+85 C
- 40 C
6
4
2
0
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
14
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
2
28
HMC751LC4
v01.0514
SMT pHEMT LOW NOISE
AMpLIFIER, 17 - 27 GHz
p1dB vs. Temperature
18
p1dB vs. Supply Voltage
18
16
14
GAIN (dB)
12
10
8
6
4
3.5 V
4.0 V
4.5 V
AMPLIFIERS - LOW NOISE - SMT
16
14
P1dB (dBm)
12
10
8
6
4
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
psat vs. Temperature
18
16
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
+25 C
+85 C
- 40 C
14
Psat (dBm)
12
10
8
6
4
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
14
16
18
20
22
24
26
28
30
FREQUENCY (GHz)
power Compression @ 21 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-25
Pout
Gain
PAE
-20
-15
INPUT POWER (dBm)
-10
-5
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC751LC4
v01.0514
SMT pHEMT LOW NOISE
AMpLIFIER, 17 - 27 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFIN)(Vdd = +4 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 11.2 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
-5 dBm
175 °C
1W
89 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+3.5
+4.0
+4.5
Idd (mA)
73
77
Note: Amplifier will operate over full voltage range shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS]
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND
package Information
Part Number
HMC751LC4
Package Body Material
Alumina, White
Lead Finish
Gold over Nickel
MSL Rating
MSL3
[1]
Package Marking
[2]
H751
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - SMT
4
69
HMC751LC4
v01.0514
SMT pHEMT LOW NOISE
AMpLIFIER, 17 - 27 GHz
pin Descriptions
Pin Number
Function
GND
Description
These pins and package bottom must be
connected to RF/DC ground.
This pin may be connected to RF/DC ground.
Performance will not be affected.
This pin is AC coupled
and matched to 50 Ohms.
This pin is AC coupled
and matched to 50 Ohms.
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 1,000 pF and 2.2 µF are required.
Interface Schematic
AMPLIFIERS - LOW NOISE - SMT
1, 3, 5 - 7, 12 - 14,
16, 18, 19, 24
2, 8 - 11,
17, 23
4
15
N/C
RFIN
RFOUT
22, 21, 20
Vdd1, 2, 3
Application Circuit
Component
C1, C2, C3
C4, C5, C6
C7, C8, C9
Value
100 pF
1,000 pF
2.2 µF
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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