NXP Semiconductors
Product specification
MMIC wideband amplifier
FEATURES
Internally matched to 50
Very wide frequency range (3.6 GHz at 3 dB bandwidth)
Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)
12.5 dBm saturated output power at 1 GHz
High linearity (22 dBm OIP3 at 1 GHz)
Unconditionally stable (K > 1.2).
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
|s
21
|
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CONDITIONS
5
23.5
22.7
4
12.5
TYP.
6
1
Top view
6
BGA2709
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
3
2
3
MAM455
4
2, 5
Marking code:
E3-.
Fig.1 Simplified outline (SOT363) and symbol.
MAX.
UNIT
V
mA
dB
dB
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
T
s
90
C
CONDITIONS
RF input AC coupled
65
MIN.
6
35
200
+150
150
10
MAX.
UNIT
V
mA
mW
C
C
dBm
2002 Aug 06
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2709 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke, L1 and the 22 nF supply decoupling
capacitor, C1 should be located as closely as possible to
the MMIC.
handbook, halfpage
BGA2709
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Simple cascade circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
oscillator
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
from RF
circuit
MGU438
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
RF in
RF out
C3
MGU436
Fig.4 IF amplifier application.
L1
RF output
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
antenna
Fig.2 Typical application circuit.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
handbook, halfpage
Fig.5 RF amplifier application.
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Power amplifier driver application.
2002 Aug 06
4
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