NXP Semiconductors
Product specification
MMIC wideband amplifier
FEATURES
Internally matched to 50
Wide frequency range (3.2 GHz at 3 dB bandwidth)
Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
5 dBm saturated output power at 1 GHz
Good linearity (11 dBm IP3
(out)
at 1 GHz)
Unconditionally stable (K > 1.5).
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
s
21
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CONDITIONS
5
12.3
21.3
3.9
4.8
TYP.
6
1
Top view
Marking code:
E2-.
BGA2712
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
6
3
2
3
MAM455
4
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
MAX.
UNIT
V
mA
dB
dB
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
T
s
90
C
CONDITIONS
RF input AC coupled
65
MIN.
6
35
200
+150
150
10
MAX.
UNIT
V
mA
mW
C
C
dBm
2002 Sep 10
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
handbook, halfpage
BGA2712
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Easy cascading application circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
from RF
circuit
MGU438
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
MGU435
oscillator
RF in
RF out
C3
Fig.4 Application as IF amplifier.
RF output
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
Fig.2 Typical application circuit.
antenna
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Fig.5 Application as RF amplifier.
handbook, halfpage
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Application as driver amplifier.
2002 Sep 10
4
stm32/stm8
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