NXP Semiconductors
Product specification
MMIC variable gain amplifier
FEATURES
High gain
Excellent adjacent channel power rejection
Small SMD package
Low dissipation.
APPLICATIONS
General purpose variable gain amplifier for low voltage
and medium power
Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 6-pin SOT363 SMD plastic package for low
voltage medium power applications.
CTRL
1
2
3
Top view
Marking code:
A3
BGA2031/1
PINNING
PIN
1
2
3
4
5
6
RFin
CTRL
V
S1
V
S2
+ RFout
GND
GND
DESCRIPTION
handbook, halfpage
6
5
4
RFin
VS1
VS2+RFout
GND
BIAS
CIRCUIT
MAM440
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
S1
V
S2
I
S
PARAMETER
supply voltage
supply voltage
supply current; pins 3 and 4
V
CTRL
= 0
V
CTRL
= 2.7 V; V
S
= 3 V
V
CTRL
= 2.4 V; V
S
= 3 V
P
L
ACPR
G
p
G
load power
adjacent channel power rejection
power gain
gain control range
at 1 dB gain compression point;
f = 1.9 GHz
f = 1.9 GHz; P
L
= 10 dBm
f = 836 MHz; P
L
= 8 dBm
f = 1.9 GHz; P
L
= 12 dBm
f = 836 MHz; P
L
= 8 dBm
f = 836 MHz; P
L
= 8 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
CONDITIONS
3
3
0
51
30
13
49
48
23
24
62
TYP.
MAX.
3.3
3.3
10
63
37
UNIT
V
V
A
mA
mA
dBm
dBc
dBc
dB
dB
dB
2001 Feb 05
2
NXP Semiconductors
Product specification
MMIC variable gain amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
V
CTRL
I
CTRL
I
S1
I
S2
P
D
P
tot
T
stg
T
j
PARAMETER
DC supply voltage
control voltage
control current
supply current; pin 3
supply current; pin 4
drive power
total power dissipation
storage temperature
operating junction temperature
T
s
80
C
CONDITIONS
65
MIN.
BGA2031/1
MAX.
3.3
< V
S
1.2
27
50
+10
200
+150
150
V
V
UNIT
mA
mA
mA
dBm
mW
C
C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to solder point
VALUE
350
UNIT
K/W
handbook, halfpage
300
MLD490
Ptot
(mW)
200
100
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating.
2001 Feb 05
3
NXP Semiconductors
Product specification
MMIC variable gain amplifier
CHARACTERISTICS
T
j
= 25
C;
Z
S
= Z
L
= 50
;
V
S
= 3 V; unless otherwise specified.
SYMBOL
f
V
S1
V
S2
I
S
PARAMETER
frequency range
supply voltage
supply voltage
supply current;
pins 3 and 4
V
CTRL
= 0; P
D
= 0 mW
V
CTRL
= 2.7 V; V
S
= 3 V; P
D
= 0 mW
V
CTRL
= 2.4 V; V
S
= 3 V; P
D
= 0 mW
I
CTRL
f = 1900 MHz
f
G
p
G
G
CS
ACPR
frequency range
power gain
gain control range
gain control slope
V
CTRL
= 2.7 V; P
L
= 12 dBm
0 < V
CTRL
< 2.7 V
note 1
1850
23
56
21
49
74
13
1:3.5
1:1.3
24
62
22
49
74
11
1:2
1:1.4
control current
V
CTRL
= 2.7 V
CONDITIONS
MIN.
800
2.7
2.7
37
23
0.7
3
3
0
51
30
0.92
TYP.
BGA2031/1
MAX.
2500
3.3
3.3
10
63
37
1.1
UNIT
MHz
V
V
A
mA
mA
mA
1950
MHz
dB
dB
dB/V
dBc
dBc
dBm
adjacent channel power
1.23
MHz offset; BW
ACP
= 30 kHz;
BW
carrier
= 1.23 MHz; P
L
= 10 dBm
rejection
1.98
MHz offset; BW
ACP
= 30 kHz;
BW
carrier
= 1.23 MHz; P
L
= 10 dBm
P
L
VSWR
IN
VSWR
OUT
f = 836 MHz
f
G
p
G
G
CS
ACPR
load power
input VSWR
output VSWR
at 1 dB gain compression point
V
CTRL
= 2.7 V
V
CTRL
= 2.7 V
frequency range
power gain
gain control range
gain control slope
V
CTRL
= 2.7 V; P
L
= 8 dBm
0 < V
CTRL
< 2.7 V
note 1
824
849
MHz
dB
dB
dB/V
dBc
dBc
dBm
adjacent channel power
885
kHz offset; BW
ACP
= 30 kHz;
BW
carrier
= 1.23 MHz; P
L
= 8 dBm
rejection
1.98
MHz offset; BW
ACP
= 30 kHz;
BW
carrier
= 1.23 MHz; P
L
= 8 dBm
P
L
VSWR
IN
VSWR
OUT
Note
load power
input VSWR
output VSWR
at 1 dB gain compression point
V
CTRL
= 2.7 V
V
CTRL
= 2.7 V
1. G
CS
= (G at V
CTRL
= 2.5 V
G at V
CTRL
= 1.5 V) / (V
CTRL
= 2.5 V
V
CTRL
= 1.5V)
2001 Feb 05
4
NXP Semiconductors
Product specification
MMIC variable gain amplifier
BGA2031/1
handbook, halfpage
60
MLD491
handbook, halfpage
16
MLD492
IS
(mA)
40
PL
(dBm)
8
836 MHz
20
0
1900 MHz
0
0
1
2
VCTRL (V)
3
−8
−30
−26
−22
−18
−14
−10
PD (dBm)
V
S
= 3 V.
V
S
= 3 V; V
CTRL
= 2.7 V.
Fig.3
Total supply current as a function of control
voltage; typical values.
Fig.4
Load power as a function of drive power;
typical values.
handbook, halfpage
40
MLD493
handbook, halfpage
Gp
(dB)
20
40
Gp
(dB)
20
MLD494
0
0
−20
−20
−40
−40
0
1
2
VCTRL (V)
3
−60
0
1
2
VCTRL (V)
3
V
S
= 3 V; P
D
=
14
dBm; f = 1.9 GHz.
V
S
= 3 V; P
D
=
14
dBm; f = 836 MHz.
Fig.5
Power gain as a function of control voltage;
typical values.
Fig.6
Power gain as a function of control voltage;
typical values.
2001 Feb 05
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
